МОДЕЛИРОВАНИЕ ЭКСПЕРИМЕНТАЛЬНЫХ РЕЗУЛЬТАТОВ ОБЛУЧЕНИЯ α-ЧАСТИЦАМИ ТЕСТОВЫХ npn–СТРУКТУР ИС С РАЗЛИЧНОЙ ШИРИНОЙ БАЗЫ …
SV Bytkin, TV Krytskaja - Visnyk NTUU KPI Seriia-Radiotekhnika …, 2023 - radap.kpi.ua
There is a contradictory assessment of the possibility of germanium (Ge) use to increase the
radiation resistance of silicon (Si) homogeneously doped with an isovalent impurity. A …
radiation resistance of silicon (Si) homogeneously doped with an isovalent impurity. A …
Design, Implementation and Evaluation of a Redundancy Management System for Fault-Tolerant Wireless Devices in Harsh Environments
M McCarthy - 2019 - search.proquest.com
Design, Implementation and Evaluation of a Redundancy Management System for Fault-
Tolerant Wireless Devices in Harsh Environments Abstract Wireless sensor networks …
Tolerant Wireless Devices in Harsh Environments Abstract Wireless sensor networks …