Theory of hydrogen in diamond

JP Goss - Journal of Physics: Condensed Matter, 2003 - iopscience.iop.org
Hydrogen is a ubiquitous impurity in diamond but in contrast to other group IV materials the
microscopic structure adopted in bulk material has largely remained elusive. It has therefore …

Ab initio study of the annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation of carbon interstitials

M Bockstedte, A Mattausch, O Pankratov - Physical Review B, 2004 - APS
The annealing kinetics of mobile intrinsic defects in cubic SiC is investigated by an ab initio
method based on density-functional theory. The interstitial-vacancy recombination, the …

Theory of hydrogen in diamond

JP Goss, R Jones, MI Heggie, CP Ewels, PR Briddon… - Physical Review B, 2002 - APS
Ab initio cluster and supercell methods are used to investigate the local geometry and
optical properties of hydrogen defects in diamond. For an isolated impurity, the bond …

Synergistic effect of segregated Pd and Au nanoparticles on semiconducting SiC for efficient photocatalytic hydrogenation of nitroarenes

CH Hao, XN Guo, M Sankar, H Yang… - … applied materials & …, 2018 - ACS Publications
Efficient catalytic hydrogenation of nitroarenes to anilines with molecular hydrogen at room
temperature is still a challenge. In this study, this transformation was achieved by using a …

Ag diffusion in cubic silicon carbide

D Shrader, SM Khalil, T Gerczak, TR Allen… - Journal of Nuclear …, 2011 - Elsevier
The diffusion of Ag impurities in bulk 3C–SiC is studied using ab initio methods based on
density functional theory. This work is motivated by the desire to reduce transport of …

First-principles study of intrinsic and hydrogen point defects in the earth-abundant photovoltaic absorber Zn 3 P 2

Z Yuan, Y **ong, G Hautier - Journal of Materials Chemistry A, 2023 - pubs.rsc.org
Zinc phosphide (Zn3P2) has had a long history of scientific interest largely because of its
potential for earth-abundant photovoltaics. To realize high-efficiency Zn3P2 solar cells, it is …

Characterization and formation of NV centers in , and SiC: An ab initio study

A Csóré, HJ Von Bardeleben, JL Cantin, A Gali - Physical Review B, 2017 - APS
Fluorescent paramagnetic defects in solids have become attractive systems for quantum
information processing in recent years. One of the leading contenders is the negatively …

Quick-start guide for first-principles modelling of point defects in crystalline materials

S Kim, SN Hood, JS Park, LD Whalley… - Journal of Physics …, 2020 - iopscience.iop.org
Defects influence the properties and functionality of all crystalline materials. For instance,
point defects participate in electronic (eg carrier generation and recombination) and optical …

Aggregation of carbon interstitials in silicon carbide: A theoretical study

A Gali, P Deák, P Ordejón, NT Son, E Janzén… - Physical Review B, 2003 - APS
Ab initio supercell calculations have been carried out to investigate clusters of carbon
interstitials in 3C-and 4H-SiC. Based on the calculated formation energies, the complex …

The effect of irradiation on the properties of SiC and devices based on this compound

EV Kalinina - Semiconductors, 2007 - Springer
Issues related to the production of radiation defects in silicon carbide of various polytypes
and with differing conductivity types and concentrations of charge carriers as a result of …