HfO 2-based thin films have raised considerable interest in ferroelectric memory devices due
to their thickness scalability and process compatibility with CMOS. Stress exhibits a …

We conducted a comprehensive investigation on the influence of TiN thickness and stress
on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 thin films. TiN top electrode layers with …

It is commonly believed that the impact of the top electrodes on the ferroelectricity of hafnium-
based thin films is due to strain engineering. However, several anomalies have occurred …

Reconfigurable devices have garnered significant attention for alleviating the scaling
requirements of conventional CMOS technology, as they require fewer components to …

The recent discovery of ferroelectric properties in HfO 2 has sparked significant interest in
the fields of nonvolatile memory and neuromorphic computing. Yet, as device scaling …

Heavy computational demands from artificial intelligence (AI) leads the research community
to explore the design space for functional materials that can be used for high performance …

Novel non-volatile memories are under intense investigation to revolutionize information
processing for ultra energy-efficient implementation of artificial intelligence and machine …

This study presents an experimental demonstration of 3-D-stackable hafnia-based selector-
free cross-point FeRAM, with enhanced disturbance immunity achieved through design …

Twins, as a special structure, have been observed in a small number of experiments on
ferroelectrics. A good understanding of the morphologies of twins is very important for twin …

Thin film ferroelectric devices with ultralow power operation, non-volatile data retention and
fast and reliable switching are attractive for non-volatile memory and as synaptic weight …