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P-type do** of GaN nanowires characterized by photoelectrochemical measurements
GaN nanowires (NWs) doped with Mg as a p-type impurity were grown on Si (111)
substrates by plasma-assisted molecular beam epitaxy. In a systematic series of …
substrates by plasma-assisted molecular beam epitaxy. In a systematic series of …
Molecular beam epitaxy of GaN nanowires on epitaxial graphene
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline
GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we …
GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we …
[HTML][HTML] Detection of an unintentional Si do** gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially resolved cathodoluminescence and …
Highly uniform arrays of site-controlled GaN nanowires are synthesized by selective area
growth using a Si 3 N 4 mask and molecular beam epitaxy. Systematic modulation of the …
growth using a Si 3 N 4 mask and molecular beam epitaxy. Systematic modulation of the …
Investigation of the effect of the do** order in GaN nanowire p–n junctions grown by molecular-beam epitaxy
We analyse the electrical and optical properties of single GaN nanowire p–n junctions
grown by plasma‐assisted molecular-beam epitaxy using magnesium and silicon as do** …
grown by plasma‐assisted molecular-beam epitaxy using magnesium and silicon as do** …
Radius-dependent homogeneous strain in uncoalesced GaN nanowires
We investigate the strain state of ensembles of thin and nearly coalescence-free self-
assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al 2 …
assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al 2 …
Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3
We investigate the occurrence of interfacial reactions during the self-assembled formation of
GaN nanowires on Ti/Al 2 O 3 (0001) substrates in plasma-assisted molecular beam epitaxy …
GaN nanowires on Ti/Al 2 O 3 (0001) substrates in plasma-assisted molecular beam epitaxy …
Optical properties of GaN nanowires grown on chemical vapor deposited-graphene
Optical properties of GaN nanowires (NWs) grown on chemical vapor deposited-graphene
transferred on an amorphous support are reported. The growth temperature was optimized …
transferred on an amorphous support are reported. The growth temperature was optimized …
External control of GaN band bending using phosphonate self-assembled monolayers
We report on the optoelectronic properties of GaN (0001) and (11̅00) surfaces after their
functionalization with phosphonic acid derivatives. To analyze the possible correlation …
functionalization with phosphonic acid derivatives. To analyze the possible correlation …
Reflectance and fast polarization dynamics of a GaN/Si nanowire ensemble
Optical phenomena in an ensemble of high-quality GaN nanowires (NWs) grown on a Si
substrate have been studied by reflectance and time-resolved luminescence. Such NWs …
substrate have been studied by reflectance and time-resolved luminescence. Such NWs …
A self-assembled graphene nanomask for the epitaxial growth of nonplanar and planar GaN
Y Xu, B Cao, Z Li, S Zheng, D Cai, M Wang, Y Zhang… - …, 2019 - pubs.rsc.org
Due to the unique properties of two-dimensional (2D) materials, van der Waals epitaxy or
the remote epitaxy of nonplanar and planar materials on 2D materials plays an important …
the remote epitaxy of nonplanar and planar materials on 2D materials plays an important …