Input parameters for the simulation of silicon solar cells in 2014
Within the silicon photovoltaics (PV) community, there are many approaches, tools, and
input parameters for simulating solar cells, making it difficult for newcomers to establish a …
input parameters for simulating solar cells, making it difficult for newcomers to establish a …
A roadmap toward 24% efficient PERC solar cells in industrial mass production
Many manufacturers choose the passivated emitter and rear cell (PERC) approach in order
to surpass the 20% cell efficiency level in mass production. In this paper, we study the …
to surpass the 20% cell efficiency level in mass production. In this paper, we study the …
On effective surface recombination parameters
This paper examines two effective surface recombination parameters: the effective surface
recombination velocity S eff and the surface saturation current density J 0 s. The …
recombination velocity S eff and the surface saturation current density J 0 s. The …
Enhanced Passivation Effect of Tunnel Oxide Prepared by Ozone‐Gas Oxidation (OGO) for n‐Type Polysilicon Passivated Contact (TOPCon) Solar Cells
L Yang, Y Ou, X Lv, N Lin, Y Zeng, Z Hu… - Energy & …, 2025 - Wiley Online Library
Nowadays, a stack of heavily doped polysilicon (poly‐Si) and tunnel oxide (SiOx) is widely
employed to improve the passivation performance in n‐type tunnel oxide passivated contact …
employed to improve the passivation performance in n‐type tunnel oxide passivated contact …
TOPerc Solar Cell: An Integral Approach of Tunnel Oxide Passivated Contact (TOPCon) and Passivated Emitter and Rear Contact (PERC) Architectures for Achieving …
Passivated emitter and rear contact (PERC) on p‐type mono silicon has a roadmap for
achieving> 24% efficiency. The decrease of the full‐area rear metal contact to partial rear …
achieving> 24% efficiency. The decrease of the full‐area rear metal contact to partial rear …
[BOOK][B] New perspectives on surface passivation: Understanding the Si-Al2O3 interface
LE Black - 2016 - books.google.com
The book addresses the problem of passivation at the surface of crystalline silicon solar
cells. More specifically, it reports on a high-throughput, industrially compatible deposition …
cells. More specifically, it reports on a high-throughput, industrially compatible deposition …
Simple and versatile UV-ozone oxide for silicon solar cell applications
Semiconductor surface clean is sometimes perceived as costly but long recognized as
pivotal in determining the final semiconductor device performance and yield. In this …
pivotal in determining the final semiconductor device performance and yield. In this …
Effect of boron concentration on recombination at the p-Si–Al2O3 interface
We examine the surface passivation properties of Al 2 O 3 deposited on boron-doped
planar⟨ 100⟩ crystalline silicon surfaces as a function of the boron concentration. Both …
planar⟨ 100⟩ crystalline silicon surfaces as a function of the boron concentration. Both …
Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
Herein we report on the passivation of crystalline silicon by gallium oxide (Ga2O3) using
oxygen plasma as the oxidizing reactant in an atomic layer deposition (ALD) process …
oxygen plasma as the oxidizing reactant in an atomic layer deposition (ALD) process …
Effect of Erbium Incorporation on SiNO/c-Si Interface in Silicon-Based Optoelectronic Devices
L Yang, Y Fan, X Lv, H Pang, S Yuan… - … on Electron Devices, 2023 - ieeexplore.ieee.org
During the fabrication process of erbium (Er)-doped Si-based light-emitting devices (LEDs),
it is well known that high-temperature annealing is necessary for the activation of Er3+ ions …
it is well known that high-temperature annealing is necessary for the activation of Er3+ ions …