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Excitonic structure and pum** power dependent emission blue-shift of type-II quantum dots
In this work we study theoretically and experimentally the multi-particle structure of the so-
called type-II quantum dots with spatially separated electrons and holes. Our calculations …
called type-II quantum dots with spatially separated electrons and holes. Our calculations …
MOVPE‐growth of InGaSb/AlP/GaP (001) quantum dots for nanoscale memory applications
The structural and optical properties of InGaSb/GaP (001) type‐II quantum dots (QDs) grown
by metalorganic vapor phase epitaxy (MOVPE) are studied. Growth strategies as growth …
by metalorganic vapor phase epitaxy (MOVPE) are studied. Growth strategies as growth …
Optical signatures of type I–type II band alignment transition in Cd (Se, Te)/ZnTe self-assembled quantum dots
Self-assembled Cd (Se, Te) quantum dots with various Se compositions embedded in the
ZnTe matrix are grown by molecular beam epitaxy. A huge redshift of the near band edge …
ZnTe matrix are grown by molecular beam epitaxy. A huge redshift of the near band edge …
Structural and optical properties of InAs/AlAsSb quantum dots with GaAs (Sb) cladding layers
We investigate the effect of GaAs 1− x Sb x cladding layer composition on the growth and
properties of InAs self-assembled quantum dots surrounded by AlAs 0.56 Sb 0.44 barriers …
properties of InAs self-assembled quantum dots surrounded by AlAs 0.56 Sb 0.44 barriers …
Growth and structure of In0. 5Ga0. 5Sb quantum dots on GaP (001)
Stranski-Krastanov (SK) growth of In 0.5 Ga 0.5 Sb quantum dots (QDs) on GaP (001) by
metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD …
metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD …
Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates
We report an investigation on the morphological, structural, and optical properties of large
size wurtzite GaAs nanowires, low doped with Mg, grown on GaAs (111) B and Si (111) …
size wurtzite GaAs nanowires, low doped with Mg, grown on GaAs (111) B and Si (111) …
Blueshifts of the emission energy in type-II quantum dot and quantum ring nanostructures
We have studied the ensemble photoluminescence (PL) of 11 GaSb/GaAs quantum dot/ring
(QD/QR) samples over≥ 5 orders of magnitude of laser power. All samples exhibit a …
(QD/QR) samples over≥ 5 orders of magnitude of laser power. All samples exhibit a …
Structural and optical properties of Be-doped high-quality self-catalyzed GaAs nanowires
Y Kang, H Li, J Tang, H Jia, X Hou, X Li… - Optical Materials …, 2021 - opg.optica.org
Crystal-phase control and crystalline quality improvement of GaAs nanowires (NWs) have
been realized by dopant (Be) incorporation in GaAs NWs. We demonstrate the improvement …
been realized by dopant (Be) incorporation in GaAs NWs. We demonstrate the improvement …
[HTML][HTML] Self-catalyzed InSb/InAs quantum dot nanowires
The nanowire platform offers great opportunities for improving the quality and range of
applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed …
applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed …
Nucleation features and energy levels of type-II InAsSbP quantum dots grown on InAs (100) substrate
The nucleation features and measurements of holes energy levels of the InAsSbP type-II
quantum dots (QDs) with respect to the InAs valence band edge by employing …
quantum dots (QDs) with respect to the InAs valence band edge by employing …