Wide bandgap semiconductors promise devices with performances not achievable using
silicon technology. Among them, silicon carbide (SiC) is considered the top-notch material …

Abstract In this work, Al/Al 2 O 3/Ge/p-Si heterostructures were fabricated by e-beam thermal
evaporation. The EDX (energy dispersive X-ray spectroscopy) map visually obtained the …

As part of a Special Issue in Honor of 30 years of the American Vacuum Society's Nellie
Yeoh Whetten Award, this Invited Perspective discusses results and trends from the authors' …

For the first time, the IVT dataset of a Schottky diode has been accurately modelled,
parameterised, and fully fit, incorporating the effects of interface inhomogeneity, patch pinch …

In this study, current conduction mechanisms of the sample (Au/Ti)/Al 2 O 3/n-GaAs were
investigated in detail using current–voltage (I–V) measurements in the temperature range of …

The forward and reverse bias current–voltage (I–V), capacitance/conductance–voltage (C/G–
V) characteristics of the fabricated Au/PVA (Bi-doped)/n-Si photodiode have been …

The objective of this study is to determine the temperature and voltage-dependent current
conduction mechanisms (CCMs) of the Al/Cu-doped DLC/p-Si Schottky device. It is aimed to …

Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage
current of 4H-SiC based high-power devices is a long-standing issue in the development of …

Barrier height inhomogeneities on Pd/n-type 4H-SiC Schottky barrier diodes in the 300–800
K temperature range have been investigated. Palladium is known to form silicide above 673 …

In this paper, we fabricated the vertical β-Ga 2 O 3 Schottky barrier diodes with floating metal
ring (FMR) edge termination structure. As the distance between the major Schottky junction …