Piezoelectric microelectromechanical systems (PiezoMEMS) are attractive for develo**
next generation self-powered microsystems. PiezoMEMS promises to eliminate the costly …

Aluminum nitride (AlN) thin films are widely investigated due to their unique physical
properties and applications in energy harvesting devices, ultrasonic transducers …

Ferroelectric switching is unambiguously demonstrated for the first time in a III-V
semiconductor based material: Al 1-x Sc x N—A discovery which could help to satisfy the …

The ferroelectricity of (Al 1− x Sc x) N (x= 0–0.34) thin films with various thicknesses was
investigated.(Al 1− x Sc x) N films were prepared at 400 C on (111) Pt/TiO x/SiO 2/(001) Si …

The objective of this article is to review the recent advancement in piezoelectric
micromachined ultrasound transducer (PMUT) technology and the associated piezoelectric …

We summarize the recipes and describe the role of sputtering parameters in producing
highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is …

Thin film piezoelectric materials offer a number of advantages in microelectromechanical
systems (MEMS), due to the large motions that can be generated, often with low hysteresis …

Radio frequency (RF) microelectromechanical systems (MEMS) based on Al1–x Sc x N are
replacing AlN-based devices because of their higher achievable bandwidths, suitable for the …

The explosion of mobile data from the internet of things (IoT) is leading to the emergence of
5G technology with dramatic frequency band expansion and efficient band allocations …

This paper provides a detailed overview of developments in transducer materials technology
relating to their current and future applications in micro-scale devices. Recent advances in …