Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology

S Dong, JM Liu, SW Cheong, Z Ren - Advances in Physics, 2015 - Taylor & Francis
Multiferroics are those materials with more than one ferroic order, and magnetoelectricity
refers to the mutual coupling between magnetism (spins and/or magnetic field) and …

Multifunctional magnetoelectric materials for device applications

N Ortega, A Kumar, JF Scott… - Journal of Physics …, 2015 - iopscience.iop.org
Over the past decade magnetoelectric (ME) mutiferroic (MF) materials and their devices are
one of the highest priority research topics that has been investigated by the scientific ferroics …

Electric field control of magnetism in multiferroic heterostructures

CAF Vaz - Journal of Physics: Condensed Matter, 2012 - iopscience.iop.org
We review the recent developments in the electric field control of magnetism in multiferroic
heterostructures, which consist of heterogeneous materials systems where a …

Magnetoelectric coupling in ferromagnetic/ferroelectric heterostructures: A survey and perspective

G Channagoudra, V Dayal - Journal of Alloys and Compounds, 2022 - Elsevier
The material realization with significant coupling between magnetic and electric order
named “magnetoelectric effect” would be a major turning point for the modern electronic …

Colossal magnetoresistance in manganites and related prototype devices

YK Liu, YW Yin, XG Li - Chinese Physics B, 2013 - iopscience.iop.org
We review colossal magnetoresistance in single phase manganites, as related to the field
sensitive spin-charge interactions and phase separation; the rectifying property and …

Manipulating magnetism in via piezostrain

J Heidler, C Piamonteze, RV Chopdekar… - Physical Review B, 2015 - APS
We present a detailed study of the ferromagnetic/ferroelectric heterostructure La 0.7 Sr 0.3
MnO 3/[Pb (Mg 1/3 Nb 2/3) O 3] 0.68-[PbTiO 3] 0.32 (011), where reversible electrical …

Achieving Significant Multilevel Modulation in Superior‐quality Organic Spin Valve

C Zhang, S Ding, Y Tian, Y Ke, JT Wang… - Advanced …, 2024 - Wiley Online Library
Organic semiconductors, characterized by their exceptionally long spin relaxation times (≈
ms) and unique spinterface effects, are considered game‐changers in spintronics. However …

[HTML][HTML] Anisotropic magnetoresistance and planar Hall effect in correlated and topological materials

T Li, L Zhang, X Hong - Journal of Vacuum Science & Technology A, 2022 - pubs.aip.org
This article reviews the recent progress in understanding the anisotropic magnetoresistance
(AMR) and the planar Hall effect (PHE) in two classes of quantum materials, the strongly …

Electric field manipulation of magnetic and transport properties in SrRuO3/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure

WP Zhou, Q Li, YQ **ong, QM Zhang, DH Wang… - Scientific reports, 2014 - nature.com
The electric field manipulation of magnetic properties is currently of great interest for the
opportunities provided in low-energy-consuming spintronics devices. Here, we report the …

Piezo-strain induced non-volatile resistance states in (011)-La2/3Sr1/3MnO3/0.7 Pb (Mg2/3Nb1/3) O3-0.3 PbTiO3 epitaxial heterostructures

Y Yang, ZL Luo, M Meng Yang, H Huang… - Applied Physics …, 2013 - pubs.aip.org
The non-volatile resistance states induced by converse piezoelectric effect are observed in
ferromagnetic/ferroelectric epitaxial heterostructures of (011)-La 2/3 Sr 1/3 MnO 3/0.7 Pb …