III‐nitride semiconductors have attracted considerable attention in recent years owing to
their excellent physical properties and wide applications in solid‐state lighting, flat‐panel …

III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …

III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …

Wafer‐scale growth of single crystal thin films of metals, semiconductors, and insulators is
crucial for manufacturing high‐performance electronic and optical devices, but still …

The third-generation semiconductors have richer and better properties than traditional
semiconductors, and show promising application prospects in high-power, high …

The refractive indices of several AlxGa1xN alloys deposited on silicon are determined by
ellipsometry and reflectivity experiments at room temperature. The AlGaN layers are grown …

GaN high electron mobility transistors (HEMTs) were monolithically integrated with silicon
CMOS to create a functional current mirror circuit. The integrated circuit was fabricated on …

Surface roughening of GaN layers grown by molecular-beam epitaxy using NH 3 as a
nitrogen source on Si (111) substrates has been studied by ex situ atomic force microscopy …

A method is presented to achieve thick high quality crack-free AlGaN layers on GaN. This
method uses jointly plastic relaxation and lateral growth. In a first step, plastic relaxation by …

The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray
photoemission spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below …