Recently, piezoelectric thin films including zinc oxide (ZnO) and aluminium nitride (AlN)
have found a broad range of lab-on-chip applications such as biosensing, particle/cell …

Recently, there has been a remarkable increase in interest in piezoelectric thin films,
particularly zinc oxide (ZnO) and aluminum nitride (AlN), deposited on flexible polymeric …

A series of AlN films were deposited on (100) silicon substrate at room temperature with
varying deposition conditions, ie, nitrogen concentration in sputtering gases (N2/(N2+ Ar)) …

With the progress of wide bandgap semiconductors, compact solid-state light-emitting
devices for the ultraviolet wavelength region are of considerable technological interest as …

The application of deep ultraviolet detection (DUV) in military and civil fields has
increasingly attracted the attention of researchers' attention. Compared with the …

Electric and pyroelectric properties of AlN layers deposited on Si substrates with different
resistivities were investigated. The dielectric constant was found to be around 12, while the …

Abstract Highly< 0001> c-axis orientated aluminum nitride (AlN) films were deposited on
silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No …

Aluminum nitride (AlN) films were synthesized onto Si (100) substrates by pulsed laser
deposition (PLD) in vacuum or nitrogen, at 0.1, 1, 5, or 10 Pa, and substrate temperatures …

Various Si-based materials such as Si (100), Si (111), oxidized Si (SiO 2), and amorphous Si
(α-Si) are used as substrates for the growth of c-axis-orientated AlN thin films using radio …

Spectroscopic ellipsometry, X-ray diffraction and transmission electron microscopy
experiments are employed to characterize aluminum nitride (AlN) thin films obtained by …