Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

This paper reviews the state of the art of directly driven proportional directional hydraulic
spool valves, which are widely used hydraulic components in the industrial and …

GaN-based high-power wide-bandgap semiconductor electronics and photonics have been
considered as promising candidates to replace conventional devices for automotive …

The breakdown voltage of GaN/Si high-electron-mobility transistors (HEMTs) for power
electronics has shown to be improved by removing the silicon substrate. The drawback to …

Superlattice (SL) structures have been used to reduce the stress in the GaN epilayer of high-
electron-mobility transistors (HEMTs). This has led to an improvement in their properties …

We highlight the flexibility of two-dimensional (2D) materials for advancing current
technologies through the introduction of 2D Raman thermography (2DRT). 2DRT combines …

This experimental study reports new aspects of electrostatic discharge (ESD) behavior in
AlGaN/GaN HEMTs. The role of Schottky gate and MESA is investigated using special test …

Neuromorphic computation using nanoscale adaptive oxide devices or memristors is a very
promising alternative to the conventional digital computing framework. Oxides of transition …

Currently, the GaN-on-silicon high electron mobility transistor (HEMT) is a promising
candidate to replace the Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for …