Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

First-principles pseudopotential total-energy and electronic-structure calculations are
reported for two Si (111)(√ 3×√ 3): Si adatom geometries. Based on these calculations, a …

Abstract k-resolved inverse-photoemission spectroscopy has been used to determine the
empty surface-state band structures of Si (111)√ 3×√ 3-Al,-Ga, and-In surfaces. The results …

Recent photoemission results on the electronic structure of clean, reconstructed Si (111) and
Si (100) surfaces are reviewed. Changes in the electronic and atomic structure induced by …

Scanning tunneling microscopy (STM) has been used to study the coverage dependence of
the atomic geometry and electronic structure of ordered overlayers of aluminum on Si (111) …

In this paper we present a detailed photoemission study of the K/Si (111) 7× 7 and K/Si
(111)(√ 3×√ 3) R30-B interfaces. Angle-resolved valence-band spectroscopy reveals the …

Scanning tunneling microscopy is used to determine the atomic structure, charge state, and
electronic energy spectrum of isolated Si dangling-bond defects at the Al/Si (111) surface. Si …

Rocking curves of reflection high-energy electron diffraction (RHEED) have been measured
from the Si (111)-(√ 3×√ 3) R30-Al,-Ga, and-In surfaces at [21 1] incidence. Dynamical …

Angle-resolved ultraviolet photoelectron spectra have been measured for the Si (111) 3× 3-
Sn surface. It has been found that the surface-state dispersions are very similar to those …

We have carried out a quantitative low-energy electron-diffraction intensity analysis of a Si
(111)-(√ 3×√ 3) R30-Al structure. We found that Al atoms on a√ 3×√ 3 array are absorbed …