Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

While the discovery of two-dimensional (2D) magnets opens the door for fundamental
physics and next-generation spintronics, it is technically challenging to achieve the room …

Spintronic devices such as magnetic tunnel junctions and skyrmions have attracted
considerable attention due to features such as nonvolatility, high scalability, low power, and …

Room-temperature skyrmions in ferromagnetic films and multilayers show promise for
encoding information bits in new computing technologies. Despite recent progress …

For reliable operation, individual cells of an STT-MRAM memory array must meet specific
requirements on their performance. In this work we review some of these requirements and …

The advent of spin transfer torque effect accommodates site-specific switching of magnetic
nanostructures by current alone without magnetic field. However, the critical current density …

Despite intense efforts it has remained unresolved whether and how interfacial spin-orbit
coupling (ISOC) affects spin transport across heavy-metal (HM)–ferromagnet (FM) …

The Technical Committee of the IEEE Magnetics Society has selected seven research topics
to develop their roadmaps, where major developments should be listed alongside expected …

We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a
recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 …

Materials with perpendicular magnetic anisotropy (PMA) are being investigated for magnetic
random access memory (MRAM) and other spintronics applications. This article is an …