With the practical efficiency of the silicon photovoltaic (PV) cell approaching its theoretical
limit, pushing conversion efficiencies even higher now relies on reducing every type of …

Advanced doped‐silicon‐layer‐based passivating contacts have boosted the power
conversion efficiency (PCE) of single‐junction crystalline silicon (c‐Si) solar cells to over …

High‐efficiency silicon solar cells featuring doped silicon layer‐based carrier‐selective
contacts suffer from optical losses due to parasitic absorption. In this work, a high …

We have studied the mechanisms underpinning effective surface passivation of silicon with
hafnium oxide (HfO 2) thin films grown via atomic layer deposition (ALD). Plasma-enhanced …

Titanium oxide (TiO x) has recently emerged as an electron-selective passivating contact for
solar cell and semiconductor device applications. The mechanism behind this function has …

Titanium oxide (TiO 2) thin film has attracted wide interest in high-efficiency silicon solar
cells as an electron selective contact due to its low conduction band offset with silicon and …

The effect of low growth rate deposition (LGD) of BaSi 2 on the film quality and performance
of silicon heterojunction solar cells was investigated. The total thickness of the BaSi 2 layer …

Atomic layer-deposited (ALD) TiO 2 thin films on silicon were deposited using titanium
tetrachloride (TiCl 4), titanium tetraisopropoxide (TTIP), and tetrakis (dimethylamino) titanium …

Polysilicon contact structures with ultra‐thin atomic layer deposited (ALD) oxide and nitride
interlayers based on SiOx, SiNx, AlOx, AlNx, and TiOx either as part of an interlayer stack …

Carrier-selective passivating contacts in crystalline silicon (c-Si) solar cells have expanded
from doped silicon films to non-silicon wide-bandgap materials to reduce parasitic …