Significant progress has recently been made in improving the stable efficiency of amorphous
silicon alloy solar cells. This has been achieved through a better understanding of the effect …

An alloy based on the group IV elements germanium and tin has the potential of yielding an
earth-abundant low bandgap energy semiconductor material with applications in the fields …

Effect of hydrogen (H2) dilution of the Silane (SiH4), acetylene (C2H2) gas mixture during
the deposition of hydrogenated amorphous silicon carbon alloy (a-SiC: H) films by Cat-CVD …

High electronic quality a-SiC: H and a-SiN: H films with optical gap up to 2.3 eV have been
deposited by ultrahigh vacuum plasma enhanced chemical vapour deposition in undiluted …

Par déposition de vapeur chimique avec poussée plasmatique dans une enceinte à
chambres multiples, nous avons produit des couches minces et des cellules solaires de type …

We report on two different, but well defined, behaviors of resistivity vs temperature in
amorphous SiC: H films deposited from (SiH 4+ C 2 H 2) gas mixture. The electrical …

We investigated the effect of hydrogen radicals on properties and structure of hydrogenated
amorphous silicon carbide (a-Si1− xCx: H) films by the use of a preparation system …

p–i–n Heterostructures deposited by ultra high vacuum plasma enhanced chemical vapour
deposition (UHV-PECVD) using silane and methane gases with and without hydrogen …

Boron-doped and undoped a-Si1− xCx: H, for x≈ 0.5, films were prepared by a plasma-
enhanced-chemical-vapor-deposition from methyltrichlorosilane as the main precursor …

Hydrogenated amorphous silicon–germanium–carbide (a-SiGeC: H) thin films have been
fabricated by very high frequency plasma enhanced chemical vapor deposition (VHF …