[HTML][HTML] Spintronics based random access memory: a review

S Bhatti, R Sbiaa, A Hirohata, H Ohno, S Fukami… - Materials Today, 2017 - Elsevier
This article reviews spintronics based memories, in particular, magnetic random access
memory (MRAM) in a systematic manner. Debuted as a humble 4 Mb product by FreeScale …

Antiferromagnetic spintronics

V Baltz, A Manchon, M Tsoi, T Moriyama, T Ono… - Reviews of Modern …, 2018 - APS
Antiferromagnetic materials could represent the future of spintronic applications thanks to
the numerous interesting features they combine: they are robust against perturbation due to …

Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction

P Qin, H Yan, X Wang, H Chen, Z Meng, J Dong, M Zhu… - Nature, 2023 - nature.com
Abstract Antiferromagnetic spintronics,,,,,,,,,,,,,,–is a rapidly growing field in condensed-
matter physics and information technology with potential applications for high-density and …

Spin-neutral currents for spintronics

DF Shao, SH Zhang, M Li, CB Eom… - Nature …, 2021 - nature.com
Electric currents carrying a net spin polarization are widely used in spintronics, whereas
globally spin-neutral currents are expected to play no role in spin-dependent phenomena …

Tunneling Spin Valves Based on Fe3GeTe2/hBN/Fe3GeTe2 van der Waals Heterostructures

Z Wang, D Sapkota, T Taniguchi, K Watanabe… - Nano …, 2018 - ACS Publications
Thin van der Waals (vdW) layered magnetic materials hold the possibility of realizing vdW
heterostructures with new functionalities. Here, we report on the realization and investigation …

Room-Temperature and Tunable Tunneling Magnetoresistance in Fe3GaTe2-Based 2D van der Waals Heterojunctions

W **, G Zhang, H Wu, L Yang, W Zhang… - ACS Applied Materials …, 2023 - ACS Publications
Magnetic tunnel junctions (MTJs) based on van der Waals (vdW) heterostructures with sharp
and clean interfaces on the atomic scale are essential for the application of next-generation …

Néel spin currents in antiferromagnets

DF Shao, YY Jiang, J Ding, SH Zhang, ZA Wang… - Physical Review Letters, 2023 - APS
Ferromagnets are known to support spin-polarized currents that control various spin-
dependent transport phenomena useful for spintronics. On the contrary, fully compensated …

Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 van der Waals Heterostructures

H Lin, F Yan, C Hu, Q Lv, W Zhu, Z Wang… - … Applied Materials & …, 2020 - ACS Publications
The van der Waals (vdW) materials offer an opportunity to build all-two-dimensional (all-2D)
spintronic devices with high-quality interfaces regardless of the lattice mismatch. Here, we …

Predictable gate-field control of spin in altermagnets with spin-layer coupling

RW Zhang, C Cui, R Li, J Duan, L Li, ZM Yu, Y Yao - Physical Review Letters, 2024 - APS
Spintronics, a technology harnessing electron spin for information transmission, offers a
promising avenue to surpass the limitations of conventional electronic devices. While the …

Tunneling magnetoresistance in noncollinear antiferromagnetic tunnel junctions

J Dong, X Li, G Gurung, M Zhu, P Zhang, F Zheng… - Physical Review Letters, 2022 - APS
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the
advantages of antiferromagnets producing no stray fields and exhibiting ultrafast …