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Multiterminal memristive nanowire devices for logic and memory applications: A review
Memristive devices have the potential for a complete renewal of the electron devices
landscape, including memory, logic, and sensing applications. This is especially true when …
landscape, including memory, logic, and sensing applications. This is especially true when …
High speed, high temperature electrical characterization of phase change materials: metastable phases, crystallization dynamics, and resistance drift
During the fast switching in Ge2Sb2Te5 phase change memory devices, both the
amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal …
amorphous and fcc crystalline phases remain metastable beyond the fcc and hexagonal …
Memristive switching of single-component metallic nanowires
Memristors have recently generated significant interest due to their potential use in
nanoscale logic and memory devices. Of the four passive circuit elements, the memristor (a …
nanoscale logic and memory devices. Of the four passive circuit elements, the memristor (a …
Modeling Reset, Set, and Read Operations in Nanoscale Ge2Sb2Te5 Phase‐Change Memory Devices Using Electric Field‐ and Temperature‐Dependent Material …
Herein, a finite element simulation framework for phase‐change memory devices that
simultaneously solves for current continuity, electrothermal heating, and crystallization …
simultaneously solves for current continuity, electrothermal heating, and crystallization …
Melting and crystallization of nanocrystalline silicon microwires through rapid self-heating
Nanocrystalline silicon microwires are self-heated through single, large amplitude, and
microsecond voltage pulses. Scanning electron micrographs show very smooth wire …
microsecond voltage pulses. Scanning electron micrographs show very smooth wire …
[HTML][HTML] Emerging non-volatile memory (NVM) technologies based nano-oscillators: Materials to applications
This comprehensive study provides a detailed review toward ongoing research on emerging
non-volatile memory technologies based nano-oscillators, ie, from the perspective of …
non-volatile memory technologies based nano-oscillators, ie, from the perspective of …
High-Temperature Electrical Characterization of Ge2Sb2Te5 Phase Change Memory Devices
F Dirisaglik - 2014 - digitalcommons.lib.uconn.edu
Phase change memory (PCM) is one of the most promising non-volatile memory
technologies in the marketplace today and offers tremendous potential for high speed …
technologies in the marketplace today and offers tremendous potential for high speed …
Limits to thermal-piezoresistive cooling in silicon micromechanical resonators
We study thermal-piezoresistive cooling in silicon micromechanical resonators at large
currents and high temperatures. Crossing a thermal transition region corresponds to a steep …
currents and high temperatures. Crossing a thermal transition region corresponds to a steep …
Scaling of silicon phase-change oscillators
Scalability of silicon-based phase-change oscillators is investigated through experimental
and computational studies. These relaxation oscillators are composed of a small volume of …
and computational studies. These relaxation oscillators are composed of a small volume of …
[КНИГА][B] Melting and Crystallization of Si and Ge2Sb2Te5Nanostructures
A Cywar - 2016 - search.proquest.com
Recent technological advances in fabrication processes have allowed for the production of
solid-state devices with dimensions as small as~ 10 nm. Improving the functionality and …
solid-state devices with dimensions as small as~ 10 nm. Improving the functionality and …