Electronic and optical properties of quantum dots on InP(100) and substrates: Theory and experiment
We study the electronic and optical properties of In As∕ In P quantum dots (QDs) on (100)
and (311) B substrates. Atomic force microscopy (AFM) and cross-sectional scanning …
and (311) B substrates. Atomic force microscopy (AFM) and cross-sectional scanning …
[BOOK][B] Semiconductor nanocrystals and metal nanoparticles: physical properties and device applications
T Chen, Y Liu - 2016 - taylorfrancis.com
Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …
Enhancing intermediate band solar cell performances through quantum engineering of dot states by droplet epitaxy
We report the effect of the quantum dot aspect ratio on the sub‐gap absorption properties of
GaAs/AlGaAs quantum dot intermediate band solar cells. We have grown AlGaAs solar cells …
GaAs/AlGaAs quantum dot intermediate band solar cells. We have grown AlGaAs solar cells …
Development of continuum states in photoluminescence of self-assembled InGaAs∕ GaAs quantum dots
Crossed transitions between the wetting layer valence band and the quantum dot (QD)
electron states are revealed in the photoluminescence from self-assembled In 0.4 Ga 0.6 …
electron states are revealed in the photoluminescence from self-assembled In 0.4 Ga 0.6 …
Calculation of metamorphic two-dimensional quantum energy system: application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures
In this work, we calculate the two-dimensional quantum energy system of the In (Ga) As
wetting layer that arises in InAs/InGaAs/GaAs metamorphic quantum dot structures. Model …
wetting layer that arises in InAs/InGaAs/GaAs metamorphic quantum dot structures. Model …
[BOOK][B] Exploring and exploiting charge-carrier confinement in semiconductor nanostructures: heterodimensionality in sub-monolayer InAs in GaAs and …
S Harrison - 2016 - search.proquest.com
Exploring and Exploiting Charge-Carrier Confinement in Semiconductor Nanostructures:
Page 1 Exploring and Exploiting Charge-Carrier Confinement in Semiconductor …
Page 1 Exploring and Exploiting Charge-Carrier Confinement in Semiconductor …
Interdash Coupling within Dense Ensembles of Quantum Dashes: Comparison of /(,,)/ and /(,)/ Systems
Lasers, light-emitting diodes, and other optoelectronic devices employing In As/In P
quantum dots (QDs) instead of quantum wells (QWs) as their active parts benefit from the …
quantum dots (QDs) instead of quantum wells (QWs) as their active parts benefit from the …
Optical properties of site-selectively grown inas/inp quantum dots with predefined positioning by block copolymer lithography
The InAs/InP quantum dots (QDs) are investigated by time-integrated (PL) and time-resolved
photoluminescence (TRPL) experiments. The QDs are fabricated site-selectively by droplet …
photoluminescence (TRPL) experiments. The QDs are fabricated site-selectively by droplet …
Impact of the cap** layers on lateral confinement in InAs∕ InP quantum dots for 1.55 μm laser applications studied by magnetophotoluminescence
We have used magnetophotoluminescence to study the impact of different cap** layer
material combinations (InP, GaInAsP quaternary alloy, or both InP and quaternary alloy) on …
material combinations (InP, GaInAsP quaternary alloy, or both InP and quaternary alloy) on …
Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD
We study the properties of highly strained InAs material calculated from first-principles
modelling using ABINIT packages. We first simulate the characteristics of bulk InAs crystals …
modelling using ABINIT packages. We first simulate the characteristics of bulk InAs crystals …