Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Electronic and optical properties of quantum dots on InP(100) and substrates: Theory and experiment
We study the electronic and optical properties of In As∕ In P quantum dots (QDs) on (100)
and (311) B substrates. Atomic force microscopy (AFM) and cross-sectional scanning …
and (311) B substrates. Atomic force microscopy (AFM) and cross-sectional scanning …
[ספר][B] Semiconductor nanocrystals and metal nanoparticles: physical properties and device applications
T Chen, Y Liu - 2016 - taylorfrancis.com
Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …
generation of electronic, optoelectronic, and photonic devices. Covering this rapidly …
Enhancing intermediate band solar cell performances through quantum engineering of dot states by droplet epitaxy
We report the effect of the quantum dot aspect ratio on the sub‐gap absorption properties of
GaAs/AlGaAs quantum dot intermediate band solar cells. We have grown AlGaAs solar cells …
GaAs/AlGaAs quantum dot intermediate band solar cells. We have grown AlGaAs solar cells …
Development of continuum states in photoluminescence of self-assembled InGaAs∕ GaAs quantum dots
Crossed transitions between the wetting layer valence band and the quantum dot (QD)
electron states are revealed in the photoluminescence from self-assembled In 0.4 Ga 0.6 …
electron states are revealed in the photoluminescence from self-assembled In 0.4 Ga 0.6 …
Calculation of metamorphic two-dimensional quantum energy system: application to wetting layer states in InAs/InGaAs metamorphic quantum dot nanostructures
In this work, we calculate the two-dimensional quantum energy system of the In (Ga) As
wetting layer that arises in InAs/InGaAs/GaAs metamorphic quantum dot structures. Model …
wetting layer that arises in InAs/InGaAs/GaAs metamorphic quantum dot structures. Model …
[ספר][B] Exploring and exploiting charge-carrier confinement in semiconductor nanostructures: heterodimensionality in sub-monolayer InAs in GaAs and …
S Harrison - 2016 - search.proquest.com
Exploring and Exploiting Charge-Carrier Confinement in Semiconductor Nanostructures:
Page 1 Exploring and Exploiting Charge-Carrier Confinement in Semiconductor …
Page 1 Exploring and Exploiting Charge-Carrier Confinement in Semiconductor …
Temperature dependent photoluminescence of an In (Ga) As/GaAs quantum dot system with different areal density
XL Zhou, YH Chen, JQ Liu, CH Jia… - Journal of Physics D …, 2010 - iopscience.iop.org
We have systematically studied the temperature dependent photoluminescence of a self-
assembled In (Ga) As/GaAs quantum dot (QD) system with different areal densities from∼ …
assembled In (Ga) As/GaAs quantum dot (QD) system with different areal densities from∼ …
Impact of the cap** layers on lateral confinement in InAs∕ InP quantum dots for 1.55 μm laser applications studied by magnetophotoluminescence
We have used magnetophotoluminescence to study the impact of different cap** layer
material combinations (InP, GaInAsP quaternary alloy, or both InP and quaternary alloy) on …
material combinations (InP, GaInAsP quaternary alloy, or both InP and quaternary alloy) on …
Time-resolved pump probe of 1.55 μm InAs∕ InP quantum dots under high resonant excitation
We have performed time-resolved resonant pump-probe experiment to study the dynamic
response of In As∕ In P quantum dot transitions. A 72-stacked In As∕ In P quantum dot …
response of In As∕ In P quantum dot transitions. A 72-stacked In As∕ In P quantum dot …
Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD
We study the properties of highly strained InAs material calculated from first-principles
modelling using ABINIT packages. We first simulate the characteristics of bulk InAs crystals …
modelling using ABINIT packages. We first simulate the characteristics of bulk InAs crystals …