Nanotechnology has grown at an enormous rate for the past three decades, and recent
advances in nanostructured materials and nanodevices have opened up new opportunities …

As the traditional silicon-based CMOS technology advances into the nanoscale stage,
approaching its physical limits, the Carbon Nanotube Field-effect Transistor (CNTFET) is …

A compact large-signal model, called Compact Carbon Nanotube Model (CCAM), is
presented that accurately describes the shape of DC and small-signal characteristics of …

This paper presents carbon nanotube field effect transistor (CNTFET) implementation of
voltage differencing current conveyor (VDCC). We propose new topology of multi input …

This work presents filter applications of carbon nanotube field effect transistors (CNTFET)
voltage differencing buffered amplifier (VDBA) based high frequency universal filters using …

As the semiconductor industry enters the post-Moore era, the carbon nanotube field-effect
transistor (CNTFET) has become a powerful substitute for silicon-based transistors beyond 5 …

This paper proposes a compact model for carbon nanotube field effect transistor (CNTFET)
based on surface potential and conduction band minima. The proposed model relates the I …

Compared to single-gate CNTFET, dual-gate structures have better electrostatic control over
nanowire conductive channels. However, currently, there is insufficient research on the back …

A comprehensive study and comparison of IV and III-V Schottky barrier (SB) double-gate
MOSFETs using a universal analytical model and Synopsys TCAD Sentaurus is presented …

In this paper, an analytical model of intrinsic carbon-nanotube field-effect transistors is
presented. The origins of the channel carriers are analyzed in the ballistic limit. A …