Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within
the semiconductor device community due to their potential to enhance device performance …

Diamond field-effect transistor (FET) has great application potential for high frequency and
high power electronic devices. In this work, diamond FETs were fabricated on (0 0 1) single …

This letter reports the small-signal and large-signal performances at high drain voltage (V
DS) ranging up to 60 V for a 0.5 μm gate length two-dimensional hole gas diamond metal …

This paper provides an overview of the developments in microwave diamond field‐effect
transistor (D‐FET) technologies. Due to the ultrawide‐bandgap and high carrier velocity and …

This article reports on the high operation voltage large-signal performance of two-
dimensional hole gas diamond metal-oxide semiconductor field-effect transistors …

We report on a comparative study of transfer do** of hydrogenated single crystal diamond
surface by insulators featured by high electron affinity, such as Nb 2 O 5, WO 3, V 2 O 5, and …

Recently, carbon spectroscopy became very important due to the growing interest in the
applications of new carbon allotropes, especially of 2D structures such as graphene and …

Hydrogenated diamond MOSFETs with self-oxidized alumina as a gate dielectric are
fabricated. The diamond MOSFETs show a high maximum drain current density of 466 …

Three sets of different gate-length field-effect transistors (250, 120, and 50 nm) have been
defined on homoepitaxial hydrogen-terminated diamond with the 50-nm device being the …

This paper reports the direct current and radio frequency characteristics of two-dimensional
hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) …