Templating layers for perpendicularly magnetized Heusler films
Devices are described that include a multi-layered structure that is non-magnetic at room
temperature, and which comprises alternating layers of Co and at least one other element E …
temperature, and which comprises alternating layers of Co and at least one other element E …
Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element
K Inubushi, K Nakada, T Sasaki - US Patent 10,453,598, 2019 - Google Patents
There is provided a magnetoresistive effect element having improved magnetoresistive
effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed …
effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed …
Magneto-resistance element in which I-III-VI2 compound semiconductor is used, method for manufacturing said magneto-resistance element, and magnetic storage …
An object of the present invention is to provide a Magneto-Resistance (MR) element
showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) …
showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) …
Layered Heusler alloys and methods for the fabrication and use thereof
Disclosed herein are layered Heusler alloys. The layered Heusler alloys can comprise a first
layer comprising a first Heusler alloy with a face-centered cubic (fcc) crystal structure and a …
layer comprising a first Heusler alloy with a face-centered cubic (fcc) crystal structure and a …
Magnetoresistance effect element
K Nakada - US Patent 11,309,115, 2022 - Google Patents
(57) ABSTRACT A magnetoresistance effect element includes a first ferro magnetic layer, a
second ferromagnetic layer, and a non magnetic spacer layer between the first …
second ferromagnetic layer, and a non magnetic spacer layer between the first …
Ferrimagnetic Heusler compounds with high spin polarization
A magnetic device and method for providing the magnetic device are disclosed. The
magnetic device includes a multilayer structure and a magnetic layer. The multilayer …
magnetic device includes a multilayer structure and a magnetic layer. The multilayer …
Thermoelectric conversion element and thermoelectric conversion device
S Nakatsuji, A Sakai - US Patent 11,683,985, 2023 - Google Patents
H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, ie
devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck …
devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck …
Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element
K Inubushi, K Nakada, T Sasaki - US Patent 10,665,374, 2020 - Google Patents
There is provided a magnetoresistive effect element having improved magnetoresistive
effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed …
effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed …
Method to approximate chemical potential in a ternary or quaternary semiconductor
YS Oh, A Kumar, LEE Kyuho, P Balasingam - US Patent 10,552,554, 2020 - Google Patents
Roughly described, a method is provided to approximate chemical potentials of elements in
ternary and quaternary compound semiconductors, for example III-V semiconduc tors. In …
ternary and quaternary compound semiconductors, for example III-V semiconduc tors. In …