A Review on the Properties and Applications of WO3 Nanostructure-Based Optical and Electronic Devices
Y Yao, D Sang, L Zou, Q Wang, C Liu - Nanomaterials, 2021 - mdpi.com
Tungsten oxide (WO3) is a wide band gap semiconductor with unintentionally n-do**
performance, excellent conductivity, and high electron hall mobility, which is considered as a …
performance, excellent conductivity, and high electron hall mobility, which is considered as a …
Manifestation on the choice of a suitable combination of MIS for proficient Schottky diodes for optoelectronics applications: A comprehensive review
In this review, we explore the last fifty years of Metal-Insulator-Semiconductor (MIS) Schottky
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
barrier diode research, highlighting a surge in interest in tailored filaments for thin films …
Fabrication of WO3 nanorods/RGO hybrid nanostructures for enhanced visible-light-driven photocatalytic degradation of Ciprofloxacin and Rhodamine B in an …
This proposed work suggests the fabrication of hybrid WO 3/reduced graphene oxide (WRG)
composites with rod-like structures through the facile hydrothermal method. The WO 3 …
composites with rod-like structures through the facile hydrothermal method. The WO 3 …
High-performance self-powered ultraviolet photodetector based on PVK/amorphous-WO3 organic-inorganic heterojunction
M Jia, L Tang, KS Teng, Y Lü - Applied Surface Science, 2024 - Elsevier
Ultraviolet (UV) photodetectors have found wide-ranging applications, ranging from optical
communications to chemical detection. High performance UV photodetectors that can be self …
communications to chemical detection. High performance UV photodetectors that can be self …
Colossal photosensitive boost in Schottky diode behaviour with Ce-V2O5 interfaced layer of MIS structure
In the present work, we have fabricated a highly photo responsive Schottky barrier diode
based on cerium infused vanadium pentoxide thin film (Ce-V 2 O 5) as a interfacial layer. It …
based on cerium infused vanadium pentoxide thin film (Ce-V 2 O 5) as a interfacial layer. It …
Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application
In this study, rare earth ytterbium (Yb)-doped V 2 O 5 thin films were effectively coated on
glass and Si substrates by the sol-gel method combined with the spin coating method. The …
glass and Si substrates by the sol-gel method combined with the spin coating method. The …
Significant enhancement in photosensitivity, responsivity, detectivity and quantum efficiency of Co3O4 nanostructured thin film-based photodetectors through Mo …
Herein, we have developed the high-performance photodetector diodes (p-Co 3 O4/n-Si and
p-Mo@ Co 3 O 4/n-Si) by spray pyrolysis route for modern optoelectronic devices. The …
p-Mo@ Co 3 O 4/n-Si) by spray pyrolysis route for modern optoelectronic devices. The …
Optical and electrical investigations of tungsten trioxide for optoelectronics devices
This study aimed to investigate the properties of WO3 thin films deposited on glass and
silicon substrates using the thermal spray technique. The films were prepared with a WO3 …
silicon substrates using the thermal spray technique. The films were prepared with a WO3 …
Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode
Photoresponse characteristics of the Au/(CoFe2O4-PVP)/n-Si (MPS) diode were
investigated using current–voltage (I–V) measurements achieved under dark and various …
investigated using current–voltage (I–V) measurements achieved under dark and various …
Superior role of V2O5 and yttrium interface layers in enhancing MIS radical photodiode performance
In this study, Cu/n-Si Schottky diodes with V 2 O 5–Y insulating interface layer were
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …
designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of …