Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many
places are now providing a substantial portion of electricity generation. Further adoption of …

Even though the passivated emitter and rear cell (PERC) concept was introduced as a
laboratory-type solar cell in 1989, it took 25 years to transfer this concept into industrial mass …

The thermal and ultraviolet (UV) stability of crystalline silicon (c-Si) surface passivation
provided by atomic layer deposited Al 2 O 3 was compared with results for thermal SiO 2⁠ …

For the passivation of p-type silicon surfaces, we investigate layer systems consisting of a
thin layer of thermally grown SiO 2 and different dielectric cap** layers deposited by …

To study recombination at the amorphous/crystalline Si (a‐Si: H/c‐Si) heterointerface, the
amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface …

In this paper, we present an effective emitter passivation scheme using SiO 2/Al 2 O 3/SiN x
stacks. Our study shows that SiO 2/Al 2 O 3/SiN x stacks can well passivate both p+ and n+ …

Fraunhofer ISE has a long experience in the field of surface passivation for crystalline silicon
wafers. Novel rear-surface passivation layer systems have led to excellent results. Using a …

In the photovoltaic industry contacts to crystalline silicon are typically formed by firing of
screen-printed metallization pastes. However, the stability of surface passivation layers …

We have presented thin Al2O3 (~ 4 nm) with SiNx: H capped (~ 75 nm) films to effectively
passivate the boron‐doped p+ emitter surfaces of the n‐type bifacial c‐Si solar cells with …

To considerably improve the conversion efficiency of industrial solar cells, the effective
passivation of the rear surface is a prerequisite. Thermal grown silicon oxides provide an …