Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Antimonide semiconductors are suitable for low-power electronics and long-wavelength
optoelectronic applications. In recent years research on antimonide nanowires has become …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

Among all material systems currently being exploited for tunnel field-effect transistor (TFET)
applications, silicon germanium (SiGe) is most likely to be adopted for the future low power …

This paper investigates the reliability of PINgate-all-around (GAA)-tunnel field-effect
transistor (TFET) with N±source pocket. The reliability of the PNIN-GAA-TFET is examined …

The present paper estimates the performance of vertically developed double gate GaSb/Si
tunnel field-effect transistor (V-DGTFET) biosensor with source pocket. A commercially …

We report the fabrication process and performance characterization of a fully integrated
ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the …

Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …

This letter demonstrates top-down InGaAs/InAs heterojunction vertical nanowire tunnel FETs
with sub-thermal subthreshold characteristics over two orders of magnitude of current. A …