Space tags: Ultra-low-power operation and radiation hardness for passive wireless sensor tags
J Grosinger… - IEEE Microwave …, 2022 - ieeexplore.ieee.org
Space agencies worldwide have a long-term vision of sending human missions to Mars. The
next favorable launch window occurs in 2033, and plans are ongoing to realize such …
next favorable launch window occurs in 2033, and plans are ongoing to realize such …
The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs
T **e, H Ge, Y Lv, J Chen - Microelectronics Reliability, 2021 - Elsevier
In this paper, the degradation mechanism of RF performance of 130 nm T-gate partially
depleted (PD) silicon-on-insulator input-output nMOSFETs at different total ionizing dose …
depleted (PD) silicon-on-insulator input-output nMOSFETs at different total ionizing dose …
Synergistic effect of total ionizing dose and electromagnetic interference in current reference circuits using scaling-down SOI technologies
Z Wang, J Wu, B Li, H Zhang, X Zhao… - 2022 Asia-Pacific …, 2022 - ieeexplore.ieee.org
This paper studies the behavior characteristics of the same structure circuits manufactured
by three different technology nodes in the synergistic environment of total ionizing dose …
by three different technology nodes in the synergistic environment of total ionizing dose …
Body Current Optimization using Threshold-Voltage-Adjust-Implant Engineering in 45nm SOI MOSFET
A Daghighi, A KhalilZad - Majlesi Journal of Electrical …, 2021 - mjee.isfahan.iau.ir
In this paper, for the first time, Threshold-voltage-adjust-implant is engineered to optimize
body current in 45 nm Silicon-on-Insulator (SOI) MOSFET. The peak value and peak position …
body current in 45 nm Silicon-on-Insulator (SOI) MOSFET. The peak value and peak position …