Aluminum nitride (AlN) thin films are widely investigated due to their unique physical
properties and applications in energy harvesting devices, ultrasonic transducers …

We summarize the recipes and describe the role of sputtering parameters in producing
highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is …

Piezoelectric materials have attracted considerable attention over the last two decades
because many technologies utilize their core properties of piezoelectric materials. Previous …

Aluminum nitride (AlN), distinguished by exceptional mechanical, optical, and electronic
properties, has found extensive applications in diverse domains, including heat dissipation …

Recently, research on energy harvesting has attracted great attention as a solution to energy
depletion and environmental problems due to the use of fossil fuels such as coal, natural …

Titanium nitride (TiN) coatings fabricated through reactive sputtering feature a suite of
parameters capable of altering the microstructure and properties. Here, we explore the …

Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …

The development of wearable technology increasingly requires bendable sensing devices
operating across multiple domains for opto‐electro‐mechanical and biochemical …

Aluminium nitride (AlN) reactively sputter-deposited from an aluminium target is an
interesting piezoelectric thin film material with high CMOS compatibility. A good c-axis …

In light of the low deposition temperature and high sputtering rate, a magnetron sputtering
(MS) technique has been widely used for fabricating various kinds of thin films with special …