Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …

Multi-junction solar cells achieve high efficiency by stacking sub-cells of different bandgaps
(typically GaInP/GaAs/Ge) resulting in efficiencies in excess of 40%. The efficiency can be …

We report the formation and phase transformation of Bi-containing clusters in $\text
{GaA}{{\text {s}} _ {1-x}} $ Bi $ _ {x} $ epilayers upon annealing. The $\text {GaA}{{\text {s}} …

GaAsBi nanowires represent a novel and promising material platform for future nano-
photonics. However, the growth of high-quality GaAsBi nanowires and GaAsBi alloy is still a …

Abstract Herein we investigate a (001)-oriented GaAs1− x Bi x/GaAs structure possessing Bi
surface droplets capable of catalysing the formation of nanostructures during Bi-rich growth …

We report the observation of atomic ordering of triple-period (TP)-A and-B type in low
temperature (LT) grown GaAsBi alloy using transmission electron microscopy (TEM). In …

GaAs/GaAsBi coaxial multishell nanowires were grown by molecular beam epitaxy.
Introducing Bi results in a characteristic nanowire surface morphology with strong …

Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for
experimental engineering of the band gap E g at low Bi concentrations (≤ 2%), in particular …

In this work, we report on the spontaneous formation of ordered arrays of nanometer-sized
Bi-rich structures due to lateral composition modulations in Ga (As, Bi)/GaAs quantum wells …