Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …

Gallium nitride (GaN) high electron mobility transistors (HEMTs) have demonstrated their
superior performance in consumer electronics. However, their longer-lifetime-demanding …

Enhanced power density factors can be achieved in the new generation of power electronics
by utilizing wide-bandgap semiconductor switching devices with higher switching speeds …

Currently, dual-active-bridge (DAB) converters are widely adopted as the power interface to
achieve a bidirectional power flow and galvanic isolation in high-frequency dc power …

Abstract The More‐Electric Engine (MEE), with its electrified engine auxiliary systems and
increased multi‐shaft power offtake, is likely to become an increasingly central aspect of …

Double pulse testing (DPT) is widely used for dynamic performance testing of power
semiconductors, as it can quickly obtain dynamic characterization parameters. In recent …

This paper presents and evaluates a novel method for generating power losses on
transistors avoiding high currents. These could heat up the circuit tracks, affecting the …

High-frequency, up to 10 MHz, switching of normally-on GaN trench CAVETs was
demonstrated using an on-wafer double pulse test (DPT) system, along with high …

GaN-HEMTs offer low on-state resistance and fast switching transitions. Thus, these devices
represent attractive candidates to build high efficient power converters with high power …

Gallium nitride (GaN) Super-Heterojunction FET (SHJ-FET) utilizes a charge-balanced PN
heterojunction, instead of a field-plate structure, to manage the E-field profile between the …