CMOS-integrated aluminum nitride MEMS: A review
Aluminum nitride (AlN) has gained wide interest owing to its high values of elastic modulus,
band gap, dielectric strength, resistivity, thermal conductivity and acoustic velocities …
band gap, dielectric strength, resistivity, thermal conductivity and acoustic velocities …
AlN piezoelectric thin films for energy harvesting and acoustic devices
Aluminum nitride (AlN) thin films are widely investigated due to their unique physical
properties and applications in energy harvesting devices, ultrasonic transducers …
properties and applications in energy harvesting devices, ultrasonic transducers …
[HTML][HTML] Piezoelectric aluminum nitride thin-films: A review of wet and dry etching techniques
Aluminum nitride (AlN) is a technologically relevant material that can be deposited at low
temperatures in the form of thin-films while preserving most of its physical properties …
temperatures in the form of thin-films while preserving most of its physical properties …
Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
Design, fabrication, and characterization of scandium aluminum nitride-based piezoelectric micromachined ultrasonic transducers
This paper presents the design, fabrication, and characterization of piezoelectric
micromachined ultrasound transducers (PMUTs) based on scandium aluminum nitride (Sc x …
micromachined ultrasound transducers (PMUTs) based on scandium aluminum nitride (Sc x …
Review on innovative piezoelectric materials for mechanical energy harvesting
The huge number of electronic devices called the Internet of Things requires miniaturized,
autonomous and ecologically sustainable power sources. A viable way to power these …
autonomous and ecologically sustainable power sources. A viable way to power these …
N-polar ScAlN and HEMTs grown by molecular beam epitaxy
Molecular beam epitaxy of single-phase wurtzite N-polar Sc x Al 1− x N (x∼ 0.11–0.38) has
been demonstrated on sapphire substrates by locking its lattice-polarity to the underlying N …
been demonstrated on sapphire substrates by locking its lattice-polarity to the underlying N …
Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN
ScAlN is an emerging ultrawide bandgap semiconductor for next-generation radio frequency
electronic devices. Here, we show that the material quality of ScAlN grown by molecular …
electronic devices. Here, we show that the material quality of ScAlN grown by molecular …
LiNbO3 films–A low-cost alternative lead-free piezoelectric material for vibrational energy harvesters
Lead-free lithium niobate (LiNbO 3) piezoelectric transducer is considered as a substitute to
lead-based solutions for vibrational energy scavenging applications. Taking into account the …
lead-based solutions for vibrational energy scavenging applications. Taking into account the …
Structural and piezoelectric properties of ultra-thin ScxAl1− xN films grown on GaN by molecular beam epitaxy
Sc x Al 1− x N (x= 0.18–0.40) thin films of∼ 28 nm thickness grown on metal polar GaN
substrates by molecular beam epitaxy are found to exhibit smooth morphology with less than …
substrates by molecular beam epitaxy are found to exhibit smooth morphology with less than …