The continuous size downscaling of complementary metal–oxide–semiconductor (CMOS)
transistors has led to the replacement of SiO 2 with a HfO 2-based high dielectric constant …

Platinum and Pd show a significant difference in work function on Si O 2 and high-K
materials (Hf O 2)⁠. The effective metal work functions for Pd, Pt, and Re on atomic layer …

Work function is one of the important physical quantities of materials that is related to various
phenomena. However, systematic discussion on the work function is limited possibly …

In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-
Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication …

A highly stretchable and transparent electrode is a key element for realizing stretchable
organic light-emitting diodes (SOLEDs). To date, several reports have been made on this …

Control of Schottky barrier heights (SBHs) at metal/semiconductor interfaces is a critically
important technique to design switching properties of semiconductor devices. In this study …

Recent advancement in the switching of perpendicular magnetic tunnel junctions with an
electric field has been a milestone for realizing ultra-low energy memory and computing …

Tailoring the work function of metal gates at a low temperature is critical to the electronic
performance of advanced nanoscale MOSFET devices. In this paper, the work function of …

The quick growth of information technology has necessitated the need for develo** novel
electronic devices capable of performing novel neuromorphic computations with low power …

Methods for manufacturing a semiconductor device includ ing a field effect transistor include
forming first fins pro truding from a Substrate including a first region and a second region, the …