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Growth Conditions and Interfacial Misfit Array in SnTe (111) Films Grown on InP (111) A Substrates by Molecular Beam Epitaxy
Tin telluride (SnTe) is an IV–VI semiconductor with a topological crystalline insulator band
structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many …
structure, high thermoelectric performance, and in-plane ferroelectricity. Despite its many …
Initial stage of InSb heteroepitaxial growth on GaAs (111) A: effect of thin InAs interlayers
A Ohtake, T Mano - Japanese Journal of Applied Physics, 2024 - iopscience.iop.org
MBE of InSb on the (111) A-oriented GaAs substrates has been studied using electron
diffraction, X-ray diffraction, and scanning probe microscopy. The direct heteroepitaxial …
diffraction, X-ray diffraction, and scanning probe microscopy. The direct heteroepitaxial …
Simulation Solution of Mbe Epitaxy of 6.1-Å Semiconductors Qw Heterostructures
PK Saxena, P Srivastava, A Srivastava… - Available at SSRN … - papers.ssrn.com
The authors present a real-time simulation method for atomistic deposition in molecular
beam epitaxy (MBE) to study how effusion cell temperature and surface kinetics affect film …
beam epitaxy (MBE) to study how effusion cell temperature and surface kinetics affect film …