A review of high-performance quantum dot lasers on silicon
Laser gain regions using quantum dots have numerous improvements over quantum wells
for photonic integration. Their atom-like density of states gives them unique gain properties …
for photonic integration. Their atom-like density of states gives them unique gain properties …
Quantum dot optoelectronic devices: lasers, photodetectors and solar cells
Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …
Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s− 1 directly modulated lasers and 40 …
This paper presents recent progress in the field of semiconductor lasers and optical
amplifiers with InAs-based self-assembled quantum dots in the active region for optical …
amplifiers with InAs-based self-assembled quantum dots in the active region for optical …
Theoretical and experimental study of optical gain, refractive index change, and linewidth enhancement factor of p-doped quantum-dot lasers
A theoretical and experimental study of the optical gain, refractive index change, and
linewidth enhancement factor (LEF) of a p-doped quantum-dot (QD) laser is reported. These …
linewidth enhancement factor (LEF) of a p-doped quantum-dot (QD) laser is reported. These …
Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150° C
Direct epitaxial growth of group III-V light sources with excellently thermal performance on
silicon photonics chips promises low-cost, low-power-consumption, high-performance …
silicon photonics chips promises low-cost, low-power-consumption, high-performance …
Electron–hole correlations govern auger recombination in nanostructures
The fast nonradiative decay of multiexcitonic states via Auger recombination is a
fundamental process affecting a variety of applications based on semiconductor …
fundamental process affecting a variety of applications based on semiconductor …
High-speed 1.3 μm tunnel injection quantum-dot lasers
1.3 μ m tunnel injection quantum-dot lasers are demonstrated. The laser heterostructures
are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are p doped to …
are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are p doped to …
New physics and devices based on self-assembled semiconductor quantum dots
Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states
and high radiative efficiencies. This makes them highly suitable both for fundamental …
and high radiative efficiencies. This makes them highly suitable both for fundamental …
Quantum-dot optoelectronic devices
Self-organized In (Ga) As/Ga (Al) As quantum dots have emerged as useful nanostructures
that can be epitaxially grown and incorporated in the active region of devices. The near …
that can be epitaxially grown and incorporated in the active region of devices. The near …
High‐Power, Narrow‐Linewidth, and Low‐Noise Quantum Dot Distributed Feedback Lasers
Single‐frequency semiconductor lasers represent a critical role in optical communications,
light detection and ranging systems, photonics integrated circuits, etc. Here, combining atom …
light detection and ranging systems, photonics integrated circuits, etc. Here, combining atom …