Laser gain regions using quantum dots have numerous improvements over quantum wells
for photonic integration. Their atom-like density of states gives them unique gain properties …

Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

This paper presents recent progress in the field of semiconductor lasers and optical
amplifiers with InAs-based self-assembled quantum dots in the active region for optical …

A theoretical and experimental study of the optical gain, refractive index change, and
linewidth enhancement factor (LEF) of a p-doped quantum-dot (QD) laser is reported. These …

Direct epitaxial growth of group III-V light sources with excellently thermal performance on
silicon photonics chips promises low-cost, low-power-consumption, high-performance …

The fast nonradiative decay of multiexcitonic states via Auger recombination is a
fundamental process affecting a variety of applications based on semiconductor …

1.3 μ m tunnel injection quantum-dot lasers are demonstrated. The laser heterostructures
are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are p doped to …

Self-assembled semiconductor quantum dots (QDs) exhibit fully quantized electronic states
and high radiative efficiencies. This makes them highly suitable both for fundamental …

Self-organized In (Ga) As/Ga (Al) As quantum dots have emerged as useful nanostructures
that can be epitaxially grown and incorporated in the active region of devices. The near …

Single‐frequency semiconductor lasers represent a critical role in optical communications,
light detection and ranging systems, photonics integrated circuits, etc. Here, combining atom …