Silicon photonics is widely used for near InfraRed (IR) applications up to 1.6 µm. It plays a
key role in short-range optical data communications. However, silicon photonics does not …

This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown
on Si substrates. The whole device structures were grown by an industry standard chemical …

Material and optical characterizations have been conducted for epitaxially grown Ge 1− x Sn
x thin films on Si with Sn composition up to 10%. A direct bandgap Ge 0.9 Sn 0.1 alloy has …

The absorption coefficient and refractive index of Ge 1− x Sn x alloys (x from 0% to 10%)
were characterized for the wavelength range from 1500 to 2500 nm via spectroscopic …

Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition
up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge …

An efficient monolithically integrated light source with complementary metal-oxide-
semiconductor (CMOS) compatibility remains the missing component to enable Si photonics …

We present results on CVD growth and electro-optical characterization of Ge_0. 92Sn_0.
08/Ge pin heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn …

Fully strained and relaxed epitaxial Ge1-xSnx alloys with Sn contents up to 12 at.% have
been grown on Ge buffered Si using an Epsilon® 2000 Plus commercial chemical vapor …

Temperature-dependent photoluminescence (PL) study has been conducted in Ge 1− x Sn x
films with Sn compositions of 0.9%, 3.2%, and 6.0% grown on Si. The competing between …