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Epitaxial Stress‐Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate
Due to its physical properties gallium‐nitride (GaN) is gaining a lot of attention as an
emerging semiconductor material in the field of high‐power and high‐frequency electronics …
emerging semiconductor material in the field of high‐power and high‐frequency electronics …
Ferroelectric Pb (Zr, Ti) O3 epitaxial layers on GaAs
L Louahadj, D Le Bourdais, L Largeau, G Agnus… - Applied Physics …, 2013 - pubs.aip.org
Ferroelectric epitaxial Pb (Zr, Ti) O 3 (PZT) layers were grown by pulsed laser deposition on
SrTiO 3/GaAs templates fabricated by molecular beam epitaxy. The templates present an …
SrTiO 3/GaAs templates fabricated by molecular beam epitaxy. The templates present an …
Temperature-dependent optical and surface electrical properties of Pb(Zr0.3Ti0.7)O3/p-GaN film
S Lin, Z Chen, R Yao, X Lin, L Wan… - Optical Materials …, 2024 - opg.optica.org
Understanding the temperature-dependent optical and electrical properties of PZT, a
multifunctional ferroelectric thin film with temperature sensitivity, is crucial for its applications …
multifunctional ferroelectric thin film with temperature sensitivity, is crucial for its applications …
[HTML][HTML] Epitaxial growth of full range of compositions of (1 1 1) PbZr1-xTixO3 on GaN
Integrating functional complex oxides with conventional (“non-oxide”) semiconductors
emerges to be an important research field and has been attracting great interest. Because of …
emerges to be an important research field and has been attracting great interest. Because of …
[HTML][HTML] Multiferroic LuFeO3 on GaN by molecular-beam epitaxy
Hexagonal LuFeO 3 exhibiting ferroelectricity and weak ferromagnetism is grown on metal-
polar GaN by molecular-beam epitaxy. The oxide films exhibit smooth surface morphologies …
polar GaN by molecular-beam epitaxy. The oxide films exhibit smooth surface morphologies …
High-performance BiFe0. 95Mn0. 05O3 ferroelectric film epitaxially integrated on GaN substrate with LSMO/TiO2 bi-layer buffer
L Xu, X Li, Q Zhu, X Xu, M Qin - Materials Letters, 2017 - Elsevier
Abstract The highly (1 1 1)-oriented BiFe 0.95 Mn 0.05 O 3 (BFMO) films owning excellent
ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La …
ferroelectric performance have been epitaxially grown on (0 0 0 2) GaN substrates with La …
Integration of ferroelectric Pb (Zr0. 52Ti0. 48) O3 thin films on conducting nanocrystalline diamond for high performance device applications
We report on the direct integration of a Pb (Zr 0.52 Ti 0.48) O 3 (PZT) thin film on a hot
filament chemical vapor deposition grown conducting boron doped nanocrystalline diamond …
filament chemical vapor deposition grown conducting boron doped nanocrystalline diamond …
Ferroelectric Pb(Zr, Ti)O3 thin layers on SrTiO3/GaAs
B Meunier, L Louahadj, D Le Bourdais… - 26th International …, 2014 - ieeexplore.ieee.org
Ferroelectric epitaxial Pb (Zr, Ti) O 3 (PZT) layers were grown by pulsed laser deposition on
SrTiO 3/GaAs templates fabricated by molecular beam epitaxy. The templates present an …
SrTiO 3/GaAs templates fabricated by molecular beam epitaxy. The templates present an …
Ferroelectric Oxides on Sili
In this chapter, we discuss efforts at integrating thin films of ferroelectric materials on silicon
and other semiconductors for the purpose of memory and logic device applications. We …
and other semiconductors for the purpose of memory and logic device applications. We …
Ferroelectric Oxides on Silicon
In this chapter, we discuss efforts at integrating thin films of ferroelectric materials on silicon
and other semiconductors for the purpose of memory and logic device applications. We …
and other semiconductors for the purpose of memory and logic device applications. We …