Metal silicides have played an indispensable role in the raped development of
microelectronics since PtSi was first used to improve the rectifying characteristics of diodes …

Studies of the properties and characteristics of transition metal silicides have been
stimulated by their (potential) use in integrated circuit technology. This review describes …

The effect of a small amount of Pt 5 at.% on the thermal stability of NiSi film on 100 and 111
Si substrates has been investigated both by in situ annealing inside an x-ray photoelectron …

Publisher Summary This chapter focuses on formation and characterization of transition-
metal silicides. Many deposition techniques can be applied to form thin silicide layers on …

Because of the practical interest of silicides, the M-Si thin film reaction has been thoroughly
investigated over the last two decades. This allows a systematic analysis of M-Si reactions …

The Ni2Si lattice and grain boundary self‐diffusion parameters have been studied using
radiotracers 63Ni for Ni diffusion, 68Ge for Si diffusion, conventional sectioning techniques …

A kinetics study of titanium silicide formation is described. The results show that a fine
grained precursor layer exist in between the well developed C-54 silicide layer and the …

The solid state reaction between Co and Si has been studied in bulk diffusion couples
between 850 and 1100° C. At the scale of the observations made, the three phases Co2Si …

VLSI Electronics: Microstructure Science, Volume 3 evaluates trends for the future of very
large scale integration (VLSI) electronics and the scientific base that supports its …

Thin Ni films evaporated onto< 100> Si single crystals are heat treated at 340° C to yield a
layer of Ni2Si on Si. 750 keV Xe atoms are implanted to serve as Kirkendall markers for the …