First-principles calculations have evolved from mere aids in explaining and supporting
experiments to powerful tools for predicting new materials and their properties. In the first …

During the last few years the interest in the indium nitride (InN) semiconductor has been
remarkable. There have been significant improvements in the growth of InN films. High …

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

Hydrogen strongly affects the electronic and structural properties of many materials. It can
bind to defects or to other impurities, often eliminating their electrical activity: this effect of …

The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-
beam epitaxy have been characterized by optical absorption, photoluminescence, and …

High-quality wurtzite-structured In-rich In1xGaxN films (0x 0.5) have been grown on
sapphire substrates by molecular beam epitaxy. Their optical properties were characterized …

Reflecting changes in the field in the ten years since the publication of the first edition, The
Handbook of Photonics, Second Edition explores recent advances that have affected this …

The properties of materials are often controlled by defects and impurities. This is particularly
true in the case of semiconductors, where the incorporation of impurities in small …

InN films with free electron concentrations ranging from mid-1017 to mid-1020 cm 3 have
been studied using optical absorption, Hall effect, and secondary ion mass spectrometry …

Various properties of semiconductor nanoparticles, including photoluminescence and
catalytic activity, make these materials attractive for a range of applications,. As …