Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
[HTML][HTML] A review of germanium-antimony-telluride phase change materials for non-volatile memories and optical modulators
Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
Ge-doped GaSb thin films with zero mass density change upon crystallization for applications in phase change memories
In order to optimize materials for phase change random access memories (PCRAM), the
effect of Ge do** on Ga-Sb alloy crystallization was studied using combined in situ …
effect of Ge do** on Ga-Sb alloy crystallization was studied using combined in situ …
Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires
We report on the fabrication and electrical characterization of phase change memory (PCM)
devices formed by In 3 Sb 1 Te 2 chalcogenide nanowires (NWs), with diameters as small as …
devices formed by In 3 Sb 1 Te 2 chalcogenide nanowires (NWs), with diameters as small as …
[HTML][HTML] Temperature-dependent thermal resistance of phase change memory
One of the key challenges of phase change memory (PCM) is its high power consumption
during the reset operation, when the phase change material (typically Ge 2 Sb 2 Te 5, ie …
during the reset operation, when the phase change material (typically Ge 2 Sb 2 Te 5, ie …
Material engineering for PCM device optimization
V Sousa, G Navarro - Phase Change Memory: Device Physics, Reliability …, 2018 - Springer
Phase change memories (PCMs) rely on the amorphous to crystalline phase transformation
of a small volume of material, and they owe their success to the unique combination of …
of a small volume of material, and they owe their success to the unique combination of …
Controlled Acceleration of PCM Cells Time Drift Through On-Chip Current-Induced Annealing for AIMC Multilevel MVM Computation
This article introduces a method to mitigate conductance time drift of phase-change memory
(PCM) cells for improved resilience of matrix-vector multiplication (MVM) in analog in …
(PCM) cells for improved resilience of matrix-vector multiplication (MVM) in analog in …
Impact of process-induced variability on multi-bit phase change memory devices
Phase change memory (PCM) shows great potential for multi-bit data storage for the next-
generation non-volatile, high-speed, high-density memories. However, the process-induced …
generation non-volatile, high-speed, high-density memories. However, the process-induced …
Reactive ion etching of Cr-doped Sb2Te3 phase change materials in CHF3/O2 gas
Y Li, F Wang, L Wang, J Huang, K Dong, K Hu… - Microelectronic …, 2020 - Elsevier
Abstract Cr doped Sb 2 Te 3 (CST) was considered to be a potential phase-change material
mainly due to its fast phase transition and high thermal stability. To manufacture high …
mainly due to its fast phase transition and high thermal stability. To manufacture high …
Advanced characterization for the development of innovative non-volatile memories
L Prazakova - 2022 - theses.hal.science
The development of innovative Non-Volatile Memory technologies (NVM) has become
crucial as the amount of data required to be stored and processed is rapidly increasing …
crucial as the amount of data required to be stored and processed is rapidly increasing …
Thermal characterization of GeSbTe alloys by Raman thermometry for Phase-Change Memories
A Patil - 2023 - theses.hal.science
Phase change Materials have been the basis of memory storage beginning from its
application for optical data storage in 1987. Fast forward to 2010s, phase change memories …
application for optical data storage in 1987. Fast forward to 2010s, phase change memories …