The rapid development of Internet of Things devices requires real time processing of a huge
amount of digital data, creating a new demand for computing technology. Phase change …

Non-volatile storage memory is widely considered to be one of the most promising
candidates to replace dynamic random access memory and even static random access …

Nonvolatile phase change random access memory (PCRAM) is regarded as one of
promising candidates for next-generation memory in the era of Big Data. The phase …

Phase‐change random access memory (PCRAM) is one of the most technologically mature
candidates for next‐generation non‐volatile memory and is currently at the forefront of …

Controlled growth of semiconductor nanowires with atomic precision offers the potential to
tune the material properties for integration into scalable functional devices. Despite …

The foundations of band theory of semiconductors were laid in 1931 in publications of A.
Wilson. 1, 2 The design of semiconductor devices on the basis of this theory predetermined …

Abstract Ge-Sb-Te (GST) thin films are emerging materials for various non-volatile memory
applications. The compounds contain a huge number of vacancies that play important roles …

Carbon (C)-doped Ge2Sb2Te5 material is a potential candidate in phase change random
access memory (PCRAM) because of its superb thermal stability and ultrahigh cycle …

The high carrier concentration and low Seebeck coefficient limit the thermoelectric
properties of Ge 2 Sb 2 Te 5 materials. In this paper, Bi-doped Ge 2 Sb 2 Te 5 thin films with …

Unconventionally high amount of atomic vacancies up to more than 10% are known to form
in Ge-Sb-Te crystals upon rapid crystallization from the amorphous phase. Upon thermal …