The market for driver assistance systems based on millimeter-wave radar sensor technology
is gaining momentum. In the near future, the full range of newly introduced car models will …

A SiGe HBT technology featuring f T/f max/BV CEO= 300GHz/500GHz/1.6 V and a minimum
CML ring oscillator gate delay of 2.0 ps is presented. The speed-improvement compared to …

Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …

A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This
technology features high-speed HBTs with peak transit frequencies f T of 240 GHz …

This paper summarizes the technological developments carried out on SiGe HBTs in the
frame of the European project DOTFIVE. The architectures of the different partners and their …

This paper describes the first fundamental frequency single-chip transceiver operating at-
band. The low-IF monostatic transceiver integrates on a single chip two 120-GHz voltage …

The overall purpose of this paper (including Part I, in this issue) is the prediction of the
ultimate electrical high-frequency performance potential for SiGeC heterojunction bipolar …

“Extreme environment” electronics represent an important niche market in the trillion dollar
global electronics industry and span the operation of electronic circuits and systems in …

Power amplifier (PA) design for 160-GHz applications in an advanced SiGe heterojunction
bipolar transistor (HBT) technology with saturated output power (P sat) in excess of 10 dBm …

In this paper, we propose a method based on 3-D electromagnetic simulations, for the
characteristic impedance extraction of transmission lines employed in TRL calibration …