Single-shot selective femtosecond and picosecond infrared laser crystallization of an amorphous Ge/Si multilayer stack
Pulsed laser crystallization is an efficient annealing technique to obtain polycrystalline
silicon or germanium films on non-refractory substrates. This is important for creating …
silicon or germanium films on non-refractory substrates. This is important for creating …
Laser crystallization of amorphous Ge thin films via a nanosecond pulsed infrared laser
Understanding the dynamics of the laser crystallization (LC) process of Ge thin films by
nanosecond (ns) pulsed infrared (IR) lasers is important for producing homogeneous, crack …
nanosecond (ns) pulsed infrared (IR) lasers is important for producing homogeneous, crack …
[BOOK][B] Relaxed Optics: Modelling and Discussions 3
PP Trokhimchuck - 2024 - evnuir.vnu.edu.ua
The last author book “Relaxed Optics: Modeling and Discussions 2” was published in
Lambert Academic Publishing in 2022. However, author active scientific researches in this …
Lambert Academic Publishing in 2022. However, author active scientific researches in this …
Highly regular nanogratings on amorphous Ge films via laser-induced periodic surface sublimation
Despite the fact that monocrystalline germanium (Ge) was historically the first material where
formation of laser-induced periodic surface structures (LIPSSs) was observed in 1965 and …
formation of laser-induced periodic surface structures (LIPSSs) was observed in 1965 and …
Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation
VA Volodin, GK Krivyakin, GD Ivlev, SL Prokopyev… - Semiconductors, 2019 - Springer
The processes of the crystallization of amorphous germanium films and multilayer
germanium/silicon structures upon exposure to nanosecond (70 ns) ruby laser radiation (λ …
germanium/silicon structures upon exposure to nanosecond (70 ns) ruby laser radiation (λ …
Optical and thermal behavior of germanium thin films under femtosecond laser irradiation
In this study, we theoretically investigate the response of a germanium thin film under
femtosecond pulsed laser irradiation. Electron and lattice temperatures, as well as material …
femtosecond pulsed laser irradiation. Electron and lattice temperatures, as well as material …
Ultrafast infrared laser crystallization of amorphous Ge films on glass substrates
Amorphous germanium films on nonrefractory glass substrates were annealed by ultrashort
near-infrared (1030 nm, 1.4 ps) and mid-infrared (1500 nm, 70 fs) laser pulses …
near-infrared (1030 nm, 1.4 ps) and mid-infrared (1500 nm, 70 fs) laser pulses …
Dynamic evolution of high spatial frequency femtosecond laser-induced periodic surface nanostructures on germanium thin films
We present a comprehensive theoretical study of the mechanisms lying behind the formation
of high spatial frequency laser-induced periodic nanostructures (HSFL-LIPSS) on …
of high spatial frequency laser-induced periodic nanostructures (HSFL-LIPSS) on …
In situ investigation of explosive crystallization in a-Ge: Experimental determination of the interface response function using dynamic transmission electron microscopy
The crystallization of amorphous semiconductors is a strongly exothermic process. Once
initiated the release of latent heat can be sufficient to drive a self-sustaining crystallization …
initiated the release of latent heat can be sufficient to drive a self-sustaining crystallization …
Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications
VA Volodin, GK Krivyakin, AV Bulgakov… - … on Micro-and Nano …, 2022 - spiedigitallibrary.org
The processes involved in picosecond infrared pulsed laser annealing of multylayer
structures consisting of alternating thin films of amorphous silicon and germanium were …
structures consisting of alternating thin films of amorphous silicon and germanium were …