Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K
In recent years, quantum-dot-like single-photon emitters in atomically thin van der Waals
materials have become a promising platform for future on-chip scalable quantum light …
materials have become a promising platform for future on-chip scalable quantum light …
[BOOK][B] Handbook of self assembled semiconductor nanostructures for novel devices in photonics and electronics
M Henini - 2011 - books.google.com
The self-assembled nanostructured materials described in this book offer a number of
advantages over conventional material technologies in a wide range of sectors. World …
advantages over conventional material technologies in a wide range of sectors. World …
Resonance fluorescence of a single semiconductor quantum dot: the impact of a fluctuating electrostatic environment
Semiconductor quantum dots are very efficient sources of single and highly
indistinguishable photons. These properties rely on the possibility to coherently control the …
indistinguishable photons. These properties rely on the possibility to coherently control the …
Strong phase separation of strained InGaN layers due to spinodal and binodal decomposition: Formation of stable quantum dots
C Tessarek, S Figge, T Aschenbrenner, S Bley… - Physical Review B …, 2011 - APS
InGaN quantum dots were grown by metal-organic vapor phase epitaxy using a phase-
separation process based on spinodal and binodal decomposition. Uncapped structures …
separation process based on spinodal and binodal decomposition. Uncapped structures …
Carrier thermal escape in families of InAs/InP self-assembled quantum dots
The temperature evolution of the photoluminescence spectra of two samples of single-layer
InAs/InP (001) self-assembled quantum dots is measured from 10 to 300 K. To understand …
InAs/InP (001) self-assembled quantum dots is measured from 10 to 300 K. To understand …
Experimental and modeling analysis of photocarrier dynamics in CZTSSe using temperature-dependent photoluminescence
B Li, X Tan, J Zhao, X Han - Materials Science and Engineering: B, 2022 - Elsevier
CZTSSe shows great potential in photovoltaic applications. However, the device efficiency is
limited by the high density detrimental defects in the absorber. Therefore, investigating the …
limited by the high density detrimental defects in the absorber. Therefore, investigating the …
Revealing mechanisms of PL properties at high and low temperature regimes in CdSe/ZnS core/shell quantum dots
B Li, W Liu, L Yan, X Zhu, Y Yang, Q Yang - Journal of Applied Physics, 2018 - pubs.aip.org
Here, we report on the strong temperature dependence of PL properties in CdSe/ZnS
core/shell quantum dots, within a broad temperature range of 80–500 K. Our results …
core/shell quantum dots, within a broad temperature range of 80–500 K. Our results …
Dependence of quantum dot photocurrent on the carrier escape nature in InAs/GaAs quantum dot solar cells
This paper presents a theoretical study of the effect of the nature of the carrier escape from
quantum dots (QDs) on the performance of InAs/GaAs QD solar cells (QDSCs), based on …
quantum dots (QDs) on the performance of InAs/GaAs QD solar cells (QDSCs), based on …
Characterization of nonradiative recombination centers in proton-irradiated InAs/GaAs quantum dots by two-wavelength-excited photoluminescence
Nonradiative recombination (NRR) centers in as-grown and proton-irradiated InAs/GaAs
quantum dot (QD) structures have been studied by two-wavelength-excited …
quantum dot (QD) structures have been studied by two-wavelength-excited …
Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition
BN Zvonkov, OV Vikhrova, MV Dorokhin, IL Kalentyeva… - Semiconductors, 2015 - Springer
The possibility of using the laser deposition method to grow crystalline light-emitting
structures with GaAsSb/GaAs quantum wells (QWs) is experimentally demonstrated for the …
structures with GaAsSb/GaAs quantum wells (QWs) is experimentally demonstrated for the …