Microstructure characterization, phase transition, and device application of phase-change memory materials

K Jiang, S Li, F Chen, L Zhu, W Li - Science and Technology of …, 2023 - Taylor & Francis
ABSTRACT Phase-change memory (PCM), recently developed as the storage-class
memory in a computer system, is a new non-volatile memory technology. In addition, the …

[HTML][HTML] Relativistic ultrafast electron diffraction at high repetition rates

KM Siddiqui, DB Durham, F Cropp, F Ji… - Structural …, 2023 - pubs.aip.org
The ability to resolve the dynamics of matter on its native temporal and spatial scales
constitutes a key challenge and convergent theme across chemistry, biology, and materials …

Role of microscopic coherent force and hot-carrier cooling in photoinduced phase transition for chalcogenide phase-change materials

L Chen, L Chen, H Chen, Y Li, L Shang, L Zhu, J Zhang… - Physical Review B, 2024 - APS
The nonequilibrium ultrafast carrier dynamics of the photoinduced phase transition in
chalcogenide phase-change material (rocksalt Ge-Sb-Te) has been investigated via real …

Optically Induced Multistage Phase Transition in Coherent Phonon-Dominated a-GeTe

L Chen, L Wang, K Jiang, J Zhang, Y Li… - The Journal of …, 2023 - ACS Publications
Ultrafast photoexcitation can decouple the multilevel nonequilibrium dynamics of electron–
lattice interactions, providing an ideal probe for dissecting photoinduced phase transition in …

The Photoinduced Response of Antimony from Femtoseconds to Minutes

S Walfort, N Holle, J Vehndel, DT Yimam… - Advanced …, 2025 - Wiley Online Library
As a phase change material (PCM), antimony exhibits a set of desirable properties that
make it an interesting candidate for photonic memory applications. These include a large …

Femtosecond electron diffraction reveals local disorder and local anharmonicity in thermoelectric SnSe

J Li, Y Qi, Q Yang, L Yue, C Yao, Z Chen… - Advanced …, 2024 - Wiley Online Library
In addition to long‐range periodicity, local disorder, with local structures deviating from the
average lattice structure, dominates the physical properties of phonons, electrons, and spin …

Traversing Double-Well Potential Energy Surfaces: Photoinduced Concurrent Intralayer and Interlayer Structural Transitions in XTe2 (X = Mo, W)

Y Qi, M Guan, D Zahn, T Vasileiadis, H Seiler… - ACS …, 2022 - ACS Publications
The microscopic arrangement of atoms and molecules is the determining factor in how
materials behave and perform; ie, the structure determines the property, a traditional …

Photoinduced shortening of metallic bond in 1T′-ReS2 revealed by femtosecond electron diffraction

J Li, L Yue, Z Chen, D **ang, J Cao - Applied Physics Letters, 2024 - pubs.aip.org
Rhenium disulfide with a distorted crystal structure has recently attracted tremendous
attention for its excitonic and highly anisotropic properties. While ultrafast spectroscopies …

Local bandgap narrowing in the forming state of threshold switching materials

K Shiojima, H Kawai, Y Kawasumi, H Takehira… - Applied Physics …, 2024 - pubs.aip.org
Threshold switching (TS) materials, such as amorphous chalcogenide, have received
significant attention for their application in storage class memory and in-memory computing …

[HTML][HTML] Ultrafast response of Ge2Sb2Te5 nanoparticles: The benefits of low energy amorphization switching with the same read/write speed of bulk memories

A Caretta, B Casarin, B Chen, BJ Kooi, M Malvestuto - APL Materials, 2023 - pubs.aip.org
We investigate the ultrafast response of crystalline Ge 2 Sb 2 Te 5 nanoparticles (NPs)
below the phase transformation threshold fluence. The observed rapid change of the optical …