Design of nitride semiconductors for solar energy conversion

A Zakutayev - Journal of Materials Chemistry A, 2016 - pubs.rsc.org
Nitride semiconductors are a promising class of materials for solar energy conversion
applications, such as photovoltaic and photoelectrochemical cells. Nitrides can have better …

Artificial photosynthesis using metal/nonmetal-nitride semiconductors: current status, prospects, and challenges

MG Kibria, Z Mi - Journal of Materials Chemistry A, 2016 - pubs.rsc.org
Artificial photosynthesis, ie the chemical transformation of sunlight, water and carbon dioxide
into high-energy-rich fuels is one of the key sustainable energy technologies to enable a …

Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN

PG Moses, M Miao, Q Yan… - The Journal of chemical …, 2011 - pubs.aip.org
; 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In
content is calculated and a strong bowing at low In content is found, described by bowing …

Si/InGaN core/shell hierarchical nanowire arrays and their photoelectrochemical properties

YJ Hwang, CH Wu, C Hahn, HE Jeong, P Yang - Nano letters, 2012 - ACS Publications
Three-dimensional hierarchical nanostructures were synthesized by the halide chemical
vapor deposition of InGaN nanowires on Si wire arrays. Single phase InGaN nanowires …

Interface engineering by piezoelectric potential in ZnO-based photoelectrochemical anode

J Shi, MB Starr, H **ang, Y Hara, MA Anderson… - Nano …, 2011 - ACS Publications
Through a process of photoelectrochemical (PEC) water splitting, we demonstrated an
effective strategy for engineering the barrier height of a heterogeneous semiconductor …

ATR-SEIRAS investigation of the fermi level of Pt cocatalyst on a GaN photocatalyst for hydrogen evolution under irradiation

M Yoshida, A Yamakata, K Takanabe… - Journal of the …, 2009 - ACS Publications
The interaction of photogenerated carries in GaN photocatalyst with Pt cocatalyst for
hydrogen evolution under irradiation was investigated from in situ ATR-SEIRAS …

High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode

B AlOtaibi, M Harati, S Fan, S Zhao… - …, 2013 - iopscience.iop.org
We have studied the photoelectrochemical properties of both undoped and Si-doped GaN
nanowire arrays in 1 mol l− 1 solutions of hydrogen bromide and potassium bromide, which …

Crystallographic effects of GaN nanostructures in photoelectrochemical reaction

Y **ao, S Vanka, TA Pham, WJ Dong, Y Sun, X Liu… - Nano Letters, 2022 - ACS Publications
Tuning the surface structure of the photoelectrode provides one of the most effective ways to
address the critical challenges in artificial photosynthesis, such as efficiency, stability, and …

Utilizing modeling, experiments, and statistics for the analysis of water-splitting photoelectrodes

YK Gaudy, S Haussener - Journal of Materials Chemistry A, 2016 - pubs.rsc.org
A multi-physics model of a planar water-splitting photoelectrode was developed, validated,
and used to identify and quantify the most significant materials-related bottlenecks in …

Comparative analysis of the GaN nonpolar plane morphology by wet treatment and its effect on electrical properties in trench MOSFET

J Zhou, W Tang, T Ju, H Wang, G Yu… - … Applied Materials & …, 2023 - ACS Publications
The morphological characteristics of the GaN nonpolar sidewalls with different crystal plane
orientations were studied under various TMAH wet treatment conditions, and the effect of …