Multiple valued logic (MVL) circuits are particularly attractive for nanoscale implementation
as advantages in information density and operating speed can be harvested using emerging …

Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute
silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit …

The state-of-the-art content based image retrieval systems has been significantly advanced
by the introduction of SIFT features and the bag-of-words image representation. Converting …

Several field-effect transistor (FET)-based device technologies are emerging as powerful
alternatives to the classical metal oxide semiconductor FET (mosfet) for computing …

Using previously developed model for CNT density variation in CNFETs and random dopant
fluctuation model in MOSFET, we compared and presented overall device variations in …

Carbon nanotube field-effect transistors (CNFETs), consisting of aligned semiconducting
single-walled carbon nanotubes (CNTs), are promising nanoscale devices for …

Introducing redundancy at the device-level has been proposed as the most effective way to
improve reliability. With the remarkable reliability of the complementary metal oxide …

Carbon nanotube field effect transistors (CNFETs) show great promise as extensions to
silicon CMOS. However, imperfections, which are mainly related to carbon nanotubes …

This paper presents an analytical model for prediction of gate-delay variation in CNFETs that
is caused by CNT density variation. The analytical gate-delay variation model is derived …

As the conventional silicon-based CMOS technology marches toward the sub-10nm region,
the problem of high power density becomes increasingly serious. Under this circumstance …