Over the last decade, novel approaches to explore low voltage flexible devices and low
power flexible circuits are being widely researched by the scientific community. To realize …

In this study, Lu atoms are incorporated into In2O3 lattice by magnetron co-sputtering,
expanding the bandgap of LuxIn1-xO (x< 1) to the solar-blind ultraviolet (SBUV) region …

Amorphous In2O3 is an emerging metal oxide semiconductor that is used widely because of
its high mobility and solution processability. Fully aqueous processing methods without …

Recently inorganic-organic hybrid materials have been quickly arisen as promising
dielectric candidates for their applications in the fabrication of solution-processed metal …

MoS2 field-effect transistors (FETs) based on high-gate insulators (such as ZrO2, HfO2, and
Al2O3) have been explored. However, the preparation of high-dielectrics typically requires …

The full‐solution‐processed oxide thin‐film transistor (TFT) array is successfully realized by
using ultrafast scanning diode laser annealing (USDLA). It integrates all solution‐processed …

Low-temperature processing of high-capacitance metal oxide-based dielectrics by solution-
based methods and their application in develo** low-voltage carbon-based transistors …

In this work, ultrathin AlxOy films used as gate dielectrics in thin-film transistors (TFTs) are
prepared in aqueous and organic electrolytes using an anodization process. A series of …

Metal oxide (MO) semiconductors are widely used in electronic devices due to their high
optical transmittance and promising electrical performance. This work describes the …

Metal oxide ion-gated transistors (MOIGTs) have garnered significant attention within the
sensing domain due to their potential for achieving heightened sensitivity while consuming …