Electronic and optical properties of semiconductor and graphene quantum dots

W Sheng, M Korkusinski, AD Güçlü, M Zielinski… - Frontiers of …, 2012‏ - Springer
Our recent work on the electronic and optical properties of semiconductor and graphene
quantum dots is reviewed. For strained self-assembled InAs quantum dots on GaAs or InP …

Approaching a fully-polarized state of nuclear spins in a solid

P Millington-Hotze, HE Dyte, S Manna… - Nature …, 2024‏ - nature.com
Magnetic noise of atomic nuclear spins is a major source of decoherence in solid-state spin
qubits. In theory, near-unity nuclear spin polarization can eliminate decoherence of the …

Enhanced Strong Interaction between Nanocavities and -shell Excitons Beyond the Dipole Approximation

C Qian, X **e, J Yang, K Peng, S Wu, F Song, S Sun… - Physical Review Letters, 2019‏ - APS
Large coupling strengths in exciton-photon interactions are important for the quantum
photonic network, while strong cavity–quantum dot interactions have been focused on s …

Impact of a topological defect and Rashba spin-orbit interaction on the thermo-magnetic and optical properties of a 2D semiconductor quantum dot with Gaussian …

JD Castano-Yepes, DA Amor-Quiroz… - Physica E: Low …, 2019‏ - Elsevier
In this paper, we examine the effect of introducing a conical disclination on the thermal and
optical properties of a two dimensional GaAs quantum dot in the presence of a uniform and …

Ellipsoidal InAs quantum dots observed by cross-sectional scanning tunneling microscopy

JH Blokland, M Bozkurt, JM Ulloa, D Reuter… - Applied Physics …, 2009‏ - pubs.aip.org
We report a detailed analysis of the shape, size, and composition of self-assembled InAs
quantum dots based on cross-sectional scanning tunneling microscopy (X-STM) …

Influence of the quantum dot geometry on -shell transitions in differently charged quantum dots

M Holtkemper, DE Reiter, T Kuhn - Physical Review B, 2018‏ - APS
Absorption spectra of neutral, negatively, and positively charged semiconductor quantum
dots are studied theoretically. We provide an overview of the main energetic structure …

New degeneracies and modification of Landau levels in the presence of a parallel linear electric field

A Edery, Y Audin - Journal of Physics Communications, 2019‏ - iopscience.iop.org
We consider a three-dimensional system where an electron moves under a constant
magnetic field (in the z-direction) and a linear electric field parallel to the magnetic field …

Excitonic behavior in self-assembled InAs/GaAs quantum rings in high magnetic fields

N Kleemans, JH Blokland, AG Taboada… - Physical Review B …, 2009‏ - APS
We investigate the exciton energy level structure of a large ensemble of InAs/GaAs quantum
rings by photoluminescence spectroscopy in magnetic fields up to 30 T for different …

Natural quantum dots in the InAs∕ GaAs wetting layer

A Babiński, J Borysiuk, S Kret, M Czyż, A Golnik… - Applied Physics …, 2008‏ - pubs.aip.org
We report on microphotoluminescence study of excitons localized by potential fluctuations in
a wetting layer (WL), which accompanies In As∕ Ga As quantum dots (QDs). Linear …

Hole levels in InAs self-assembled quantum dots

JH Blokland, FJP Wijnen, PCM Christianen… - Physical Review B …, 2007‏ - APS
We measure the energy levels and charging spectra of holes in self-assembled InAs
quantum dots using capacitance-voltage and polarized photoluminescence spectroscopy in …