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Spintronic devices for high-density memory and neuromorphic computing–A review
Spintronics is a growing research field that focuses on exploring materials and devices that
take advantage of the electron's “spin” to go beyond charge based devices. The most …
take advantage of the electron's “spin” to go beyond charge based devices. The most …
High-performance computing-in-memory architecture using STT-/SOT-based series triple-level cell MRAM
Spin-torque-based magnetic random access memories (MRAMs) have emerged as a
promising option for next-generation data-centric computing systems. Multi-level cell (MLC) …
promising option for next-generation data-centric computing systems. Multi-level cell (MLC) …
Performance comparison of single level STT and SOT MRAM cells for cache applications
The research on intrinsic spin of electrons results a new type of memory device, Spin-
transfer-torque magnetic random access memory (STT-MRAM). The property of non …
transfer-torque magnetic random access memory (STT-MRAM). The property of non …
SOT and STT based four-Bit parallel MRAM cell for high-density applications
Spintronics based magnetic random-access memory (MRAM) offers nonvolatility, good
scalability, high access speed, and low-power benefits over conventional complementary …
scalability, high access speed, and low-power benefits over conventional complementary …
Double magnetic tunnel junction two bit memory and nonvolatile logic for in situ computing
In exascale computing, a huge amount of data is processed in real-time. Conventional
CMOS-based computing paradigms follow the read, compute, and write back mechanism …
CMOS-based computing paradigms follow the read, compute, and write back mechanism …
High-performance voltage controlled multilevel MRAM cell
In the recent past, spin-transfer torque (STT) and spin-orbit torque (SOT) based magnetic
random access memories (MRAMs) have been studied for future energy efficient and non …
random access memories (MRAMs) have been studied for future energy efficient and non …
SPICE-based compact model for voltage-induced magnetocapacitance in magnetic tunnel junctions
Ensuring faster data processing and higher integration density while meeting the power
budget is a challenging task as the world is moving toward next-generation computing …
budget is a challenging task as the world is moving toward next-generation computing …
MPT tool: A parameter extraction tool for accurate modeling of magnetic tunnel junction devices
Until now, many models of magnetic tunnel junction (MTJ) devices have been reported in
the literatures, which are very helpful for behavior simulations in spintronic circuit design and …
the literatures, which are very helpful for behavior simulations in spintronic circuit design and …
[HTML][HTML] Field-free spin–orbit torque switching of magnetic tunnel junction structure based on two-dimensional van der Waals WTe2
In recent years, two-dimensional van der Waals (2D vdWs) heterostructures have attracted
great research interest due to their great potential in fundamental physics research and …
great research interest due to their great potential in fundamental physics research and …
Predicted Modeling of Hybrid Spintronic-electronic Devices Based on the Verilog-A Compact Model of Magnetic Heterostructure
Applied interest to spintronics devices based on magnetic tunnel junction (MTJ) is motivated
mainly by low power consumption and high density. To co-design hybrid spintronic …
mainly by low power consumption and high density. To co-design hybrid spintronic …